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SI2311DS-T1-E3 from VISHAY

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SI2311DS-T1-E3

Manufacturer: VISHAY

P-Channel 1.8-V (G-S) MOSFET

Partnumber Manufacturer Quantity Availability
SI2311DS-T1-E3,SI2311DST1E3 VISHAY 4400 In Stock

Description and Introduction

P-Channel 1.8-V (G-S) MOSFET The SI2311DS-T1-E3 is a MOSFET manufactured by Vishay. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Specifications:**  
- **Manufacturer:** Vishay  
- **Part Number:** SI2311DS-T1-E3  
- **Type:** N-Channel MOSFET  
- **Drain-Source Voltage (VDSS):** 20V  
- **Gate-Source Voltage (VGS):** ±8V  
- **Continuous Drain Current (ID):** 5.7A  
- **Pulsed Drain Current (IDM):** 20A  
- **Power Dissipation (PD):** 2.5W  
- **On-Resistance (RDS(on)):** 30mΩ (max) at VGS = 4.5V  
- **Threshold Voltage (VGS(th)):** 0.65V (min) to 1.5V (max)  
- **Package:** PowerPAK® SO-8  
- **Operating Temperature Range:** -55°C to +150°C  

### **Descriptions:**  
- The SI2311DS-T1-E3 is a small-signal N-Channel MOSFET designed for high-efficiency power management applications.  
- It is optimized for low-voltage, high-speed switching applications.  

### **Features:**  
- Low on-resistance (RDS(on)) for reduced conduction losses.  
- Fast switching performance.  
- Compact PowerPAK® SO-8 package for space-saving designs.  
- Suitable for load switching, power management, and DC-DC conversion.  

This information is based solely on the manufacturer's datasheet and specifications.

Application Scenarios & Design Considerations

P-Channel 1.8-V (G-S) MOSFET
Partnumber Manufacturer Quantity Availability
SI2311DS-T1-E3,SI2311DST1E3 VIS 33000 In Stock

Description and Introduction

P-Channel 1.8-V (G-S) MOSFET The SI2311DS-T1-E3 is a P-channel MOSFET manufactured by Vishay Siliconix (VIS).  

### **Specifications:**  
- **Type:** P-Channel  
- **Drain-Source Voltage (VDSS):** -20V  
- **Gate-Source Voltage (VGS):** ±12V  
- **Continuous Drain Current (ID):** -4.3A  
- **RDS(on) (Max):** 55mΩ @ VGS = -4.5V  
- **Power Dissipation (PD):** 1.4W  
- **Package:** SOT-23  
- **Operating Temperature Range:** -55°C to +150°C  

### **Description:**  
The SI2311DS-T1-E3 is a P-channel MOSFET designed for low-voltage, high-efficiency power management applications. It features low on-resistance and fast switching performance.  

### **Features:**  
- Low threshold voltage  
- High current handling capability  
- Small SOT-23 package for space-constrained designs  
- Lead (Pb)-free and RoHS compliant  

This MOSFET is commonly used in power switching, load switching, and battery management applications.

Application Scenarios & Design Considerations

P-Channel 1.8-V (G-S) MOSFET

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