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SI2311DS-T1-E3 from VISHAY

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SI2311DS-T1-E3

Manufacturer: VISHAY, VIS

P-Channel 1.8-V (G-S) MOSFET
Partnumber Manufacturer Quantity Availability
SI2311DS-T1-E3,SI2311DST1E3 VISHAY, VIS 37400 In Stock

Description and Introduction

P-Channel 1.8-V (G-S) MOSFET The SI2311DS-T1-E3 is a MOSFET manufactured by Vishay. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Specifications:**  
- **Manufacturer:** Vishay  
- **Part Number:** SI2311DS-T1-E3  
- **Type:** N-Channel MOSFET  
- **Drain-Source Voltage (VDSS):** 20V  
- **Gate-Source Voltage (VGS):** ±8V  
- **Continuous Drain Current (ID):** 5.7A  
- **Pulsed Drain Current (IDM):** 20A  
- **Power Dissipation (PD):** 2.5W  
- **On-Resistance (RDS(on)):** 30mΩ (max) at VGS = 4.5V  
- **Threshold Voltage (VGS(th)):** 0.65V (min) to 1.5V (max)  
- **Package:** PowerPAK® SO-8  
- **Operating Temperature Range:** -55°C to +150°C  

### **Descriptions:**  
- The SI2311DS-T1-E3 is a small-signal N-Channel MOSFET designed for high-efficiency power management applications.  
- It is optimized for low-voltage, high-speed switching applications.  

### **Features:**  
- Low on-resistance (RDS(on)) for reduced conduction losses.  
- Fast switching performance.  
- Compact PowerPAK® SO-8 package for space-saving designs.  
- Suitable for load switching, power management, and DC-DC conversion.  

This information is based solely on the manufacturer's datasheet and specifications.

Application Scenarios & Design Considerations

P-Channel 1.8-V (G-S) MOSFET

Alternative Part Number

  • BSS138 --: Widely available N-channel MOSFET in SOT-23 with similar small-signal switching characteristics, a common drop-in substitute for low-voltage switching applications.
  • 2N7002 --: Industry-standard N-channel MOSFET in SOT-23 package with comparable voltage and current ratings, suitable for general-purpose switching.
  • AO3400A --: Logic-level N-channel MOSFET in SOT-23 offering low on-resistance and similar pinout, a good alternative for load switching.
  • BSS138LT1G --: Widely available N-channel MOSFET in SOT-23 with similar voltage and current ratings, commonly used as a drop-in replacement for small-signal switching applications.
  • 2N7002K-T1-E3 --: Same manufacturer family as the original, SOT-23 N-channel MOSFET with comparable RDS(on) and threshold voltage, suitable for low-side switching.
  • MMBF170LT1G --: SOT-23 N-channel MOSFET with similar small-signal switching characteristics and pinout, a practical alternative when the original is unavailable.

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