SI2311DS-T1-E3Manufacturer: VISHAY P-Channel 1.8-V (G-S) MOSFET | |||
| Partnumber | Manufacturer | Quantity | Availability |
|---|---|---|---|
| SI2311DS-T1-E3,SI2311DST1E3 | VISHAY | 4400 | In Stock |
Description and Introduction
P-Channel 1.8-V (G-S) MOSFET The SI2311DS-T1-E3 is a MOSFET manufactured by Vishay. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:
### **Specifications:**   ### **Descriptions:**   ### **Features:**   This information is based solely on the manufacturer's datasheet and specifications. |
|||
Application Scenarios & Design Considerations
P-Channel 1.8-V (G-S) MOSFET
|
|||
| Partnumber | Manufacturer | Quantity | Availability |
| SI2311DS-T1-E3,SI2311DST1E3 | VIS | 33000 | In Stock |
Description and Introduction
P-Channel 1.8-V (G-S) MOSFET The SI2311DS-T1-E3 is a P-channel MOSFET manufactured by Vishay Siliconix (VIS).  
### **Specifications:**   ### **Description:**   ### **Features:**   This MOSFET is commonly used in power switching, load switching, and battery management applications. |
|||
Application Scenarios & Design Considerations
P-Channel 1.8-V (G-S) MOSFET
|
|||
For immediate assistance, call us at +86 533 2716050 or email [email protected]
Specializes in hard-to-find components chips