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SI2302CDS-T1-E3 from VISHAY

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SI2302CDS-T1-E3

Manufacturer: VISHAY

N-Channel 20-V (D-S) MOSFET

Partnumber Manufacturer Quantity Availability
SI2302CDS-T1-E3,SI2302CDST1E3 VISHAY 2804 In Stock

Description and Introduction

N-Channel 20-V (D-S) MOSFET The SI2302CDS-T1-E3 is a P-Channel MOSFET manufactured by Vishay. Below are its specifications, descriptions, and features based on factual information from Ic-phoenix technical data files:

### **Specifications:**
- **Manufacturer:** Vishay  
- **Part Number:** SI2302CDS-T1-E3  
- **Type:** P-Channel MOSFET  
- **Drain-Source Voltage (VDS):** -20V  
- **Gate-Source Voltage (VGS):** ±8V  
- **Continuous Drain Current (ID):** -4.3A  
- **Pulsed Drain Current (IDM):** -17A  
- **Power Dissipation (PD):** 1.25W  
- **On-Resistance (RDS(on)):** 50mΩ (max) at VGS = -4.5V  
- **Threshold Voltage (VGS(th)):** -0.6V to -1.5V  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** SOT-23 (TO-236AB)  

### **Descriptions:**
- The SI2302CDS-T1-E3 is a P-Channel MOSFET designed for low-voltage, high-efficiency power management applications.  
- It is suitable for load switching, power management, and DC-DC conversion in portable electronics.  

### **Features:**
- **Low On-Resistance:** Ensures minimal power loss in switching applications.  
- **Fast Switching Speed:** Optimized for high-efficiency power conversion.  
- **Small Form Factor:** SOT-23 package allows for space-saving PCB designs.  
- **Lead (Pb)-Free & RoHS Compliant:** Meets environmental standards.  

This information is strictly based on the manufacturer's datasheet and specifications.

Application Scenarios & Design Considerations

N-Channel 20-V (D-S) MOSFET
Partnumber Manufacturer Quantity Availability
SI2302CDS-T1-E3,SI2302CDST1E3 VIS 33000 In Stock

Description and Introduction

N-Channel 20-V (D-S) MOSFET The SI2302CDS-T1-E3 is a P-channel MOSFET manufactured by Vishay Siliconix (VIS). Here are the factual details from Ic-phoenix technical data files:

### **Manufacturer:**  
Vishay Siliconix (VIS)  

### **Specifications:**  
- **Type:** P-Channel MOSFET  
- **Drain-Source Voltage (VDS):** -20 V  
- **Gate-Source Voltage (VGS):** ±8 V  
- **Continuous Drain Current (ID):** -4.3 A  
- **RDS(on) (Max):** 0.065 Ω @ VGS = -4.5 V  
- **Power Dissipation (PD):** 1.25 W  
- **Operating Junction Temperature (TJ):** -55°C to +150°C  
- **Package:** SOT-23 (TO-236AB)  

### **Descriptions:**  
- Designed for high-efficiency power management applications.  
- Low on-resistance for reduced conduction losses.  
- Suitable for load switching, power management, and DC-DC conversion.  

### **Features:**  
- **Low Threshold Voltage:** Enhances performance in low-voltage applications.  
- **Fast Switching Speed:** Improves efficiency in high-frequency circuits.  
- **AEC-Q101 Qualified:** Meets automotive reliability standards.  
- **Lead (Pb)-Free & RoHS Compliant:** Environmentally friendly.  

This information is based solely on the manufacturer's datasheet and product specifications.

Application Scenarios & Design Considerations

N-Channel 20-V (D-S) MOSFET

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