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SI2301DS from VISHAY

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SI2301DS

Manufacturer: VISHAY

20-V (D-S) Single

Partnumber Manufacturer Quantity Availability
SI2301DS VISHAY 30000 In Stock

Description and Introduction

20-V (D-S) Single The SI2301DS is a P-channel MOSFET manufactured by Vishay. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Specifications:**
- **Manufacturer:** Vishay  
- **Type:** P-Channel MOSFET  
- **Drain-Source Voltage (VDSS):** -20V  
- **Gate-Source Voltage (VGS):** ±8V  
- **Continuous Drain Current (ID):** -3.7A  
- **Pulsed Drain Current (IDM):** -15A  
- **Power Dissipation (PD):** 1.25W  
- **On-Resistance (RDS(on)):** 85mΩ @ VGS = -4.5V  
- **Threshold Voltage (VGS(th)):** -0.7V to -1.5V  
- **Package:** SOT-23 (3-pin)  

### **Descriptions:**
- The SI2301DS is a P-channel enhancement-mode MOSFET designed for low-voltage, high-speed switching applications.  
- It is commonly used in power management, load switching, and battery protection circuits.  

### **Features:**
- Low on-resistance for reduced conduction losses.  
- Fast switching speed for efficient performance.  
- Compact SOT-23 package for space-constrained applications.  
- Suitable for portable and battery-powered devices.  

This information is based solely on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

20-V (D-S) Single

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