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SI2301DS-T1 from SIRLICONIX

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SI2301DS-T1

Manufacturer: SIRLICONIX

P-Channel 1.25-W/ 2.5-V MOSFET
Partnumber Manufacturer Quantity Availability
SI2301DS-T1,SI2301DST1 SIRLICONIX 2787 In Stock

Description and Introduction

P-Channel 1.25-W/ 2.5-V MOSFET The SI2301DS-T1 is a P-channel MOSFET manufactured by SIRLICONIX.  

### **Specifications:**  
- **Drain-Source Voltage (VDS):** -20V  
- **Gate-Source Voltage (VGS):** ±12V  
- **Continuous Drain Current (ID):** -3.1A  
- **Power Dissipation (PD):** 1.25W  
- **On-Resistance (RDS(on)):** 85mΩ @ VGS = -4.5V  
- **Threshold Voltage (VGS(th)):** -1V (typical)  
- **Operating Temperature Range:** -55°C to +150°C  

### **Descriptions & Features:**  
- **Package:** SOT-23 (3-pin)  
- **Technology:** Advanced Trench MOSFET  
- **Low On-Resistance:** Enhances efficiency in power applications  
- **Fast Switching Speed:** Suitable for high-frequency switching circuits  
- **Low Gate Charge:** Reduces drive power requirements  
- **RoHS Compliant:** Meets environmental standards  

This MOSFET is commonly used in power management, load switching, and DC-DC conversion applications.

Application Scenarios & Design Considerations

P-Channel 1.25-W/ 2.5-V MOSFET

Alternative Part Number

  • AO3401A --: P-channel MOSFET with similar -30V/-4A ratings and low RDS(on), commonly used as a drop-in replacement for SI2301DS in SOT-23 packages.
  • DMG2301L --: P-channel enhancement-mode MOSFET in SOT-23 with comparable voltage and current ratings, suitable for load-switch and level-shift applications.
  • PMV65XP --: P-channel MOSFET in SOT-23 offering similar -20V/-3A characteristics, a widely available alternative for low-voltage switching circuits.

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