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SI2301ADS from VISHAY

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SI2301ADS

Manufacturer: VISHAY, VIAHAY

P-Channel 2.5-V (G-S) MOSFET
Partnumber Manufacturer Quantity Availability
SI2301ADS VISHAY, VIAHAY 30500 In Stock

Description and Introduction

P-Channel 2.5-V (G-S) MOSFET The part **SI2301ADS** is manufactured by **VIAHAY**. Below are the factual specifications, descriptions, and features based on Ic-phoenix technical data files:

### **Specifications:**
- **Type:** P-Channel MOSFET  
- **Drain-Source Voltage (VDS):** -20V  
- **Gate-Source Voltage (VGS):** ±12V  
- **Continuous Drain Current (ID):** -3.2A  
- **Power Dissipation (PD):** 1.25W  
- **On-Resistance (RDS(on)):** 80mΩ (max) at VGS = -4.5V  
- **Threshold Voltage (VGS(th)):** -0.8V (max)  
- **Package:** SOT-23  

### **Descriptions:**
- The **SI2301ADS** is a P-Channel enhancement mode MOSFET designed for low-voltage, high-speed switching applications.  
- It is suitable for power management in portable electronics, battery protection circuits, and load switching.  

### **Features:**  
- Low on-resistance for improved efficiency.  
- Fast switching speed.  
- Small SOT-23 package for space-constrained designs.  
- RoHS compliant.  

This information is strictly based on the manufacturer's provided data.

Application Scenarios & Design Considerations

P-Channel 2.5-V (G-S) MOSFET

Alternative Part Number

  • AO3401A --: P-channel MOSFET in SOT-23 with similar Vds and Rds(on) ratings, widely used as a drop-in replacement for the SI2301 series.
  • DMG2301L --: P-channel enhancement-mode MOSFET in SOT-23 with comparable voltage and current ratings, suitable for load-switch and level-shift applications.
  • BSS84 --: Common P-channel MOSFET in SOT-23 with lower current capability but adequate for many low-power switching circuits; verify current margin before use.
  • PMV65XP --: P-channel MOSFET in SOT-23 with matching package and comparable electrical characteristics.

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