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SI2301ADS from VISHAY

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SI2301ADS

Manufacturer: VISHAY

P-Channel 2.5-V (G-S) MOSFET

Partnumber Manufacturer Quantity Availability
SI2301ADS VISHAY 30000 In Stock

Description and Introduction

P-Channel 2.5-V (G-S) MOSFET The SI2301ADS is a P-channel MOSFET manufactured by Vishay.  

### **Specifications:**  
- **Drain-Source Voltage (VDS):** -20 V  
- **Gate-Source Voltage (VGS):** ±8 V  
- **Continuous Drain Current (ID):** -3.2 A  
- **Pulsed Drain Current (IDM):** -12 A  
- **Power Dissipation (PD):** 1.25 W  
- **On-Resistance (RDS(on)):** 85 mΩ (max) at VGS = -4.5 V  
- **Threshold Voltage (VGS(th)):** -0.4 V to -1.5 V  
- **Operating Junction Temperature (TJ):** -55°C to +150°C  
- **Package:** SOT-23  

### **Descriptions and Features:**  
- **Low On-Resistance:** Optimized for power efficiency.  
- **Fast Switching Speed:** Suitable for high-frequency applications.  
- **Low Gate Charge:** Enhances switching performance.  
- **Avalanche Energy Rated:** Provides ruggedness in operation.  
- **Lead-Free and RoHS Compliant:** Meets environmental standards.  

This MOSFET is commonly used in power management, load switching, and DC-DC conversion applications.

Application Scenarios & Design Considerations

P-Channel 2.5-V (G-S) MOSFET
Partnumber Manufacturer Quantity Availability
SI2301ADS VIAHAY 500 In Stock

Description and Introduction

P-Channel 2.5-V (G-S) MOSFET The part **SI2301ADS** is manufactured by **VIAHAY**. Below are the factual specifications, descriptions, and features based on Ic-phoenix technical data files:

### **Specifications:**
- **Type:** P-Channel MOSFET  
- **Drain-Source Voltage (VDS):** -20V  
- **Gate-Source Voltage (VGS):** ±12V  
- **Continuous Drain Current (ID):** -3.2A  
- **Power Dissipation (PD):** 1.25W  
- **On-Resistance (RDS(on)):** 80mΩ (max) at VGS = -4.5V  
- **Threshold Voltage (VGS(th)):** -0.8V (max)  
- **Package:** SOT-23  

### **Descriptions:**
- The **SI2301ADS** is a P-Channel enhancement mode MOSFET designed for low-voltage, high-speed switching applications.  
- It is suitable for power management in portable electronics, battery protection circuits, and load switching.  

### **Features:**  
- Low on-resistance for improved efficiency.  
- Fast switching speed.  
- Small SOT-23 package for space-constrained designs.  
- RoHS compliant.  

This information is strictly based on the manufacturer's provided data.

Application Scenarios & Design Considerations

P-Channel 2.5-V (G-S) MOSFET

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