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SI1903DL-T1 from VISHAY

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SI1903DL-T1

Manufacturer: VISHAY

Dual P-Channel 2.5-V (G-S) MOSFET

Partnumber Manufacturer Quantity Availability
SI1903DL-T1,SI1903DLT1 VISHAY 36140 In Stock

Description and Introduction

Dual P-Channel 2.5-V (G-S) MOSFET The SI1903DL-T1 is a P-channel MOSFET manufactured by Vishay.  

**Specifications:**  
- **Drain-Source Voltage (VDSS):** -20V  
- **Gate-Source Voltage (VGS):** ±12V  
- **Continuous Drain Current (ID):** -4.3A  
- **Pulsed Drain Current (IDM):** -17A  
- **Power Dissipation (PD):** 2.5W  
- **On-Resistance (RDS(on)):** 50mΩ @ VGS = -4.5V, ID = -3.7A  
- **Threshold Voltage (VGS(th)):** -1V to -2V  
- **Package:** PowerPAK® SO-8  

**Descriptions and Features:**  
- Designed for high-efficiency power management applications.  
- Low on-resistance for reduced conduction losses.  
- Optimized for switching applications.  
- Lead (Pb)-free and RoHS-compliant.  
- Suitable for load switching, DC-DC conversion, and battery management.  

For detailed datasheet information, refer to Vishay’s official documentation.

Application Scenarios & Design Considerations

Dual P-Channel 2.5-V (G-S) MOSFET

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