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SI1902CDL-T1-GE3 from VISHAY

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SI1902CDL-T1-GE3

Manufacturer: VISHAY

Dual N-Channel 20 V (D-S) MOSFET

Partnumber Manufacturer Quantity Availability
SI1902CDL-T1-GE3,SI1902CDLT1GE3 VISHAY 11500 In Stock

Description and Introduction

Dual N-Channel 20 V (D-S) MOSFET **Manufacturer:** VISHAY  

**Part Number:** SI1902CDL-T1-GE3  

### **Specifications:**  
- **Transistor Type:** P-Channel MOSFET  
- **Drain-Source Voltage (VDS):** -20V  
- **Gate-Source Voltage (VGS):** ±12V  
- **Continuous Drain Current (ID):** -5.8A  
- **Power Dissipation (PD):** 2.5W  
- **On-Resistance (RDS(on)):** 45mΩ (max) at VGS = -4.5V  
- **Threshold Voltage (VGS(th)):** -0.7V (max)  
- **Package:** PowerPAK® SC-75 (SOT-523)  

### **Descriptions and Features:**  
- **Low On-Resistance:** Optimized for power efficiency.  
- **Compact Package:** Small footprint for space-constrained applications.  
- **Fast Switching:** Suitable for high-frequency applications.  
- **AEC-Q101 Qualified:** Meets automotive reliability standards.  
- **Lead-Free & RoHS Compliant:** Environmentally friendly.  

This MOSFET is commonly used in power management, load switching, and DC-DC conversion applications.

Application Scenarios & Design Considerations

Dual N-Channel 20 V (D-S) MOSFET

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