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SI1563DH-T1-E3 from VISHAY

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SI1563DH-T1-E3

Manufacturer: VISHAY

Complementary 20 V (D-S) Low-Threshold MOSFET

Partnumber Manufacturer Quantity Availability
SI1563DH-T1-E3,SI1563DHT1E3 VISHAY 3000 In Stock

Description and Introduction

Complementary 20 V (D-S) Low-Threshold MOSFET The SI1563DH-T1-E3 is a P-channel MOSFET manufactured by Vishay. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Specifications:**  
- **Manufacturer:** Vishay  
- **Part Number:** SI1563DH-T1-E3  
- **Transistor Type:** P-Channel MOSFET  
- **Drain-Source Voltage (VDSS):** -20V  
- **Gate-Source Voltage (VGS):** ±12V  
- **Continuous Drain Current (ID):** -6.3A  
- **Pulsed Drain Current (IDM):** -25A  
- **Power Dissipation (PD):** 2.5W  
- **On-Resistance (RDS(on)):**  
  - 36mΩ at VGS = -4.5V  
  - 45mΩ at VGS = -2.5V  
- **Threshold Voltage (VGS(th)):** -1V to -2V  
- **Total Gate Charge (Qg):** 12nC  
- **Input Capacitance (Ciss):** 750pF  
- **Output Capacitance (Coss):** 190pF  
- **Reverse Transfer Capacitance (Crss):** 65pF  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** PowerPAK® SO-8  

### **Descriptions and Features:**  
- Designed for high-efficiency power management applications.  
- Low on-resistance for reduced conduction losses.  
- Optimized for switching applications.  
- Lead (Pb)-free and RoHS compliant.  
- Suitable for load switching, DC-DC converters, and battery management.  

This information is based solely on the manufacturer's datasheet.

Application Scenarios & Design Considerations

Complementary 20 V (D-S) Low-Threshold MOSFET

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