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SI1070X-T1-GE3 from VISHAY

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SI1070X-T1-GE3

Manufacturer: VISHAY

N-Channel 30-V (D-S) MOSFET
Partnumber Manufacturer Quantity Availability
SI1070X-T1-GE3,SI1070XT1GE3 VISHAY 12000 In Stock

Description and Introduction

N-Channel 30-V (D-S) MOSFET **Manufacturer:** VISHAY  

**Part Number:** SI1070X-T1-GE3  

### **Specifications:**  
- **Type:** N-Channel MOSFET  
- **Technology:** TrenchFET® Gen IV  
- **Drain-Source Voltage (VDSS):** 30V  
- **Continuous Drain Current (ID):** 30A  
- **RDS(ON) (Max):** 4.5mΩ @ VGS = 10V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 2.5W  
- **Operating Junction Temperature (TJ):** -55°C to +150°C  
- **Package:** PowerPAK® SO-8  

### **Descriptions & Features:**  
- **Low On-Resistance:** Optimized for high-efficiency power management.  
- **Fast Switching:** Suitable for high-frequency applications.  
- **Avalanche Rated:** Enhanced ruggedness for reliability.  
- **Lead-Free & RoHS Compliant:** Environmentally friendly.  
- **Automotive Grade:** AEC-Q101 qualified for automotive applications.  
- **Applications:** DC-DC converters, motor control, load switching, and power management in automotive and industrial systems.  

(Data sourced from Vishay's official documentation.)

Application Scenarios & Design Considerations

N-Channel 30-V (D-S) MOSFET

Alternative Part Number

  • DMG3415U-7 --: P-channel MOSFET in SOT-23 with comparable Vds and Rds(on), suitable drop-in replacement for low-voltage switching applications.
  • FDC6333C --: Dual P-channel MOSFET in SuperSOT-6 offering similar voltage and current ratings, good alternative for load switching and power management.
  • PMV65XP,215 --: P-channel MOSFET in SOT-23 with low Rds(on) and comparable ratings, widely available and cost-effective substitute.

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