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SI1032X-T1 from VISHAY

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SI1032X-T1

Manufacturer: VISHAY

N-Channel 20-V (D-S) MOSFET

Partnumber Manufacturer Quantity Availability
SI1032X-T1,SI1032XT1 VISHAY 5780 In Stock

Description and Introduction

N-Channel 20-V (D-S) MOSFET The SI1032X-T1 is a MOSFET manufactured by Vishay. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Specifications:**  
- **Manufacturer:** Vishay  
- **Part Number:** SI1032X-T1  
- **Type:** N-Channel MOSFET  
- **Package:** PowerPAK® SC-70-3L  
- **Drain-Source Voltage (VDSS):** 30V  
- **Continuous Drain Current (ID):** 2.5A  
- **RDS(ON) (Max):** 0.065Ω @ VGS = 4.5V  
- **Gate-Source Voltage (VGS):** ±12V  
- **Power Dissipation (PD):** 0.8W  
- **Operating Temperature Range:** -55°C to +150°C  

### **Descriptions:**  
- The SI1032X-T1 is a small-signal N-Channel MOSFET designed for high-efficiency power management applications.  
- It is optimized for low-voltage, high-speed switching applications.  

### **Features:**  
- **Low On-Resistance:** Ensures minimal power loss.  
- **Small Footprint:** PowerPAK® SC-70-3L package saves board space.  
- **High-Speed Switching:** Suitable for fast switching applications.  
- **Lead-Free & RoHS Compliant:** Meets environmental standards.  

This information is strictly based on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

N-Channel 20-V (D-S) MOSFET
Partnumber Manufacturer Quantity Availability
SI1032X-T1,SI1032XT1 SILICONIX 5650 In Stock

Description and Introduction

N-Channel 20-V (D-S) MOSFET The SI1032X-T1 is a power MOSFET manufactured by Siliconix (now part of Vishay). Below are its key specifications, descriptions, and features based on available information:

### **Specifications:**
- **Manufacturer:** Siliconix (Vishay)  
- **Part Number:** SI1032X-T1  
- **Type:** N-Channel MOSFET  
- **Drain-Source Voltage (VDSS):** 20V  
- **Continuous Drain Current (ID):** 6.3A  
- **RDS(ON) (Max):** 0.028Ω (at VGS = 4.5V)  
- **Gate-Source Voltage (VGS):** ±8V  
- **Power Dissipation (PD):** 2.5W  
- **Package:** SOT-23 (3-pin)  

### **Descriptions:**
- Designed for high-efficiency power switching applications.  
- Low on-resistance (RDS(ON)) for reduced conduction losses.  
- Suitable for battery management, load switching, and DC-DC converters.  

### **Features:**
- **Low Threshold Voltage:** Enhances performance in low-voltage applications.  
- **Fast Switching Speed:** Optimized for high-frequency operation.  
- **Compact SOT-23 Package:** Space-saving design for portable electronics.  
- **AEC-Q101 Qualified:** Meets automotive reliability standards (if applicable).  

For detailed datasheet information, refer to Vishay's official documentation.

Application Scenarios & Design Considerations

N-Channel 20-V (D-S) MOSFET

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