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SI1032X-T1 from VISHAY

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SI1032X-T1

Manufacturer: VISHAY, SILICONIX

N-Channel 20-V (D-S) MOSFET

Partnumber Manufacturer Quantity Availability
SI1032X-T1,SI1032XT1 VISHAY, SILICONIX 11430 In Stock

Description and Introduction

N-Channel 20-V (D-S) MOSFET The SI1032X-T1 is a power MOSFET manufactured by Siliconix (now part of Vishay). Below are its key specifications, descriptions, and features based on available information:

### **Specifications:**
- **Manufacturer:** Siliconix (Vishay)  
- **Part Number:** SI1032X-T1  
- **Type:** N-Channel MOSFET  
- **Drain-Source Voltage (VDSS):** 20V  
- **Continuous Drain Current (ID):** 6.3A  
- **RDS(ON) (Max):** 0.028Ω (at VGS = 4.5V)  
- **Gate-Source Voltage (VGS):** ±8V  
- **Power Dissipation (PD):** 2.5W  
- **Package:** SOT-23 (3-pin)  

### **Descriptions:**
- Designed for high-efficiency power switching applications.  
- Low on-resistance (RDS(ON)) for reduced conduction losses.  
- Suitable for battery management, load switching, and DC-DC converters.  

### **Features:**
- **Low Threshold Voltage:** Enhances performance in low-voltage applications.  
- **Fast Switching Speed:** Optimized for high-frequency operation.  
- **Compact SOT-23 Package:** Space-saving design for portable electronics.  
- **AEC-Q101 Qualified:** Meets automotive reliability standards (if applicable).  

For detailed datasheet information, refer to Vishay's official documentation.

Application Scenarios & Design Considerations

N-Channel 20-V (D-S) MOSFET

Alternative Part Number

  • 2N7002 --: Widely available N-channel MOSFET in SOT-23 with comparable voltage and current ratings, a common drop-in for small-signal switching applications.
  • BSS138 --: Logic-level N-channel MOSFET in SOT-23 with similar RDS(on) and voltage rating, suitable for low-side switching and level shifting.
  • MMBF170 --: N-channel MOSFET in SOT-23 with comparable small-signal characteristics, often used as an alternative in low-power switching circuits.

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