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SI1031X-T1-E3 from SI

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SI1031X-T1-E3

Manufacturer: SI

P-Channel 20-V (D-S) MOSFET

Partnumber Manufacturer Quantity Availability
SI1031X-T1-E3,SI1031XT1E3 SI 1000 In Stock

Description and Introduction

P-Channel 20-V (D-S) MOSFET The SI1031X-T1-E3 is a P-channel MOSFET manufactured by Vishay Siliconix.  

### **Manufacturer:**  
- **Vishay Siliconix**  

### **Specifications:**  
- **Type:** P-Channel MOSFET  
- **Voltage (VDS):** -30V  
- **Current (ID):** -5.5A (continuous)  
- **RDS(ON):** 0.045Ω (max) @ VGS = -10V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 2.5W  
- **Package:** SOT-23 (3-pin)  
- **Operating Temperature Range:** -55°C to +150°C  

### **Features:**  
- Low on-resistance  
- High-speed switching  
- Lead-free and RoHS compliant  
- Halogen-free according to IEC 61249-2-21  

### **Applications:**  
- Power management  
- Load switching  
- DC-DC converters  
- Battery protection  

This information is based on the manufacturer's datasheet. For detailed performance characteristics, refer to Vishay Siliconix documentation.

Application Scenarios & Design Considerations

P-Channel 20-V (D-S) MOSFET
Partnumber Manufacturer Quantity Availability
SI1031X-T1-E3,SI1031XT1E3 VISHAY 177000 In Stock

Description and Introduction

P-Channel 20-V (D-S) MOSFET The SI1031X-T1-E3 is a P-channel MOSFET manufactured by Vishay. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Specifications:**  
- **Manufacturer:** Vishay  
- **Part Number:** SI1031X-T1-E3  
- **Type:** P-Channel MOSFET  
- **Drain-Source Voltage (VDSS):** -20V  
- **Gate-Source Voltage (VGS):** ±12V  
- **Continuous Drain Current (ID):** -4.3A  
- **Pulsed Drain Current (IDM):** -17A  
- **On-Resistance (RDS(on)):** 0.045Ω (at VGS = -4.5V)  
- **Power Dissipation (PD):** 1.4W  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** SOT-23 (TO-236AB)  

### **Descriptions:**  
- The SI1031X-T1-E3 is a P-channel MOSFET designed for power management applications.  
- It is optimized for low-voltage, high-efficiency switching applications.  

### **Features:**  
- Low on-resistance (RDS(on)) for reduced conduction losses.  
- Fast switching performance.  
- Compact SOT-23 package for space-constrained designs.  
- Suitable for battery-powered and portable devices.  

This information is strictly based on the manufacturer's datasheet.

Application Scenarios & Design Considerations

P-Channel 20-V (D-S) MOSFET

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