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SI1029X-T1-E3 from VISHAY

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SI1029X-T1-E3

Manufacturer: VISHAY

Complementary N- and P-Channel 60-V (D-S) MOSFET

Partnumber Manufacturer Quantity Availability
SI1029X-T1-E3,SI1029XT1E3 VISHAY 120000 In Stock

Description and Introduction

Complementary N- and P-Channel 60-V (D-S) MOSFET The SI1029X-T1-E3 is a P-channel MOSFET manufactured by Vishay. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Manufacturer:** Vishay  
### **Part Number:** SI1029X-T1-E3  

### **Specifications:**  
- **Channel Type:** P-Channel  
- **Drain-Source Voltage (VDSS):** -20V  
- **Gate-Source Voltage (VGS):** ±12V  
- **Continuous Drain Current (ID):** -3.7A  
- **Pulsed Drain Current (IDM):** -15A  
- **On-Resistance (RDS(on)):** 85mΩ @ VGS = -4.5V  
- **Power Dissipation (PD):** 1.4W  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** SOT-23 (TO-236AB)  

### **Descriptions:**  
- Designed for high-efficiency power management applications.  
- Suitable for load switching and power distribution in portable electronics.  

### **Features:**  
- Low on-resistance for reduced conduction losses.  
- Fast switching performance.  
- Lead-free and RoHS compliant.  
- Halogen-free according to IEC 61249-2-21.  

This information is based solely on the manufacturer's datasheet. No additional guidance or suggestions are included.

Application Scenarios & Design Considerations

Complementary N- and P-Channel 60-V (D-S) MOSFET

Alternative Part Number

  • NTJD4152PT1G --: Dual P-channel MOSFET in SC-89/SOT-563 package with comparable voltage and current ratings, suitable drop-in replacement for load switching applications.
  • PMGD290XN,115 --: Dual N-channel MOSFET in small SOT-363 package offering similar RDS(on) and gate charge characteristics for low-power switching.
  • DMG2305UX-7 --: P-channel MOSFET in SOT-23 with low on-resistance and comparable voltage rating, widely available alternative for similar circuit functions.

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