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SI1025X-T1-E3 from VISHAY

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SI1025X-T1-E3

Manufacturer: VISHAY

P-Channel 60-V (D-S) MOSFET

Partnumber Manufacturer Quantity Availability
SI1025X-T1-E3,SI1025XT1E3 VISHAY 16600 In Stock

Description and Introduction

P-Channel 60-V (D-S) MOSFET The SI1025X-T1-E3 is a P-channel MOSFET manufactured by Vishay. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Specifications:**  
- **Manufacturer:** Vishay  
- **Part Number:** SI1025X-T1-E3  
- **Transistor Type:** P-Channel MOSFET  
- **Drain-Source Voltage (VDSS):** -20V  
- **Gate-Source Voltage (VGS):** ±12V  
- **Continuous Drain Current (ID):** -5.7A  
- **Pulsed Drain Current (IDM):** -20A  
- **Power Dissipation (PD):** 2.5W  
- **On-Resistance (RDS(on)):** 45mΩ (max) at VGS = -4.5V  
- **Threshold Voltage (VGS(th)):** -1V (max)  
- **Package:** SOT-23 (TO-236AB)  
- **Operating Temperature Range:** -55°C to +150°C  

### **Descriptions:**  
The SI1025X-T1-E3 is a P-channel MOSFET designed for high-efficiency power management applications. It features low on-resistance and fast switching performance, making it suitable for load switching, power management, and DC-DC conversion.  

### **Features:**  
- Low on-resistance (RDS(on)) for reduced conduction losses  
- Fast switching speed  
- Compact SOT-23 package for space-constrained applications  
- Lead (Pb)-free and RoHS compliant  
- Suitable for portable and battery-powered devices  

This information is based solely on the manufacturer's datasheet and specifications.

Application Scenarios & Design Considerations

P-Channel 60-V (D-S) MOSFET

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