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SI1021R-T1-E3 from VISHAY

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SI1021R-T1-E3

Manufacturer: VISHAY

P-Channel 60-V (D-S) MOSFET

Partnumber Manufacturer Quantity Availability
SI1021R-T1-E3,SI1021RT1E3 VISHAY 6000 In Stock

Description and Introduction

P-Channel 60-V (D-S) MOSFET The SI1021R-T1-E3 is a P-channel MOSFET manufactured by Vishay. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Manufacturer:** Vishay  
### **Part Number:** SI1021R-T1-E3  

### **Specifications:**  
- **Channel Type:** P-Channel  
- **Drain-Source Voltage (VDSS):** -20V  
- **Gate-Source Voltage (VGS):** ±12V  
- **Continuous Drain Current (ID):** -3.7A  
- **Pulsed Drain Current (IDM):** -15A  
- **On-Resistance (RDS(on)):** 85mΩ (max) at VGS = -4.5V  
- **Power Dissipation (PD):** 1.4W  
- **Operating Junction Temperature (TJ):** -55°C to +150°C  
- **Package:** SOT-23 (3-pin)  

### **Descriptions:**  
- The SI1021R-T1-E3 is a P-channel MOSFET designed for low-voltage, high-efficiency power management applications.  
- It is suitable for load switching, power management, and battery protection circuits.  

### **Features:**  
- Low on-resistance (RDS(on)) for reduced power loss.  
- Fast switching performance.  
- Compact SOT-23 package for space-constrained designs.  
- RoHS compliant.  

This information is based solely on the manufacturer's datasheet. For detailed application notes or reliability data, refer to Vishay's official documentation.

Application Scenarios & Design Considerations

P-Channel 60-V (D-S) MOSFET

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