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SGW5N60RUFDTM from FAIRCHILD,Fairchild Semiconductor

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SGW5N60RUFDTM

Manufacturer: FAIRCHILD, SEC

Discrete, Short Circuit Rated IGBT with Diode
Partnumber Manufacturer Quantity Availability
SGW5N60RUFDTM FAIRCHILD, SEC 1490 In Stock

Description and Introduction

Discrete, Short Circuit Rated IGBT with Diode The **SGW5N60RUFDTM** is a MOSFET manufactured by **FAIRCHILD** (now part of ON Semiconductor). Below are its key specifications, descriptions, and features based on factual data:

### **Specifications:**  
- **Manufacturer:** FAIRCHILD (ON Semiconductor)  
- **Type:** N-Channel MOSFET  
- **Voltage Rating (VDS):** 600V  
- **Current Rating (ID):** 5A (continuous)  
- **Power Dissipation (PD):** 125W  
- **Gate-Source Voltage (VGS):** ±30V  
- **On-Resistance (RDS(on)):** 1.5Ω (max) @ VGS = 10V  
- **Gate Charge (Qg):** 16nC (typical)  
- **Input Capacitance (Ciss):** 560pF (typical)  
- **Output Capacitance (Coss):** 45pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 6pF (typical)  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** TO-252 (DPAK)  

### **Descriptions:**  
- Designed for **high-voltage, high-speed switching** applications.  
- Suitable for **power supplies, motor control, and inverters**.  
- Low gate charge and **fast switching** performance.  

### **Features:**  
- **Low RDS(on)** for reduced conduction losses.  
- **High voltage capability** (600V).  
- **Improved dv/dt capability** for robustness.  
- **Avalanche energy specified** for reliability.  
- **Lead-free and RoHS compliant**.  

This information is sourced directly from the manufacturer's datasheet. No additional recommendations or guidance are provided.

Application Scenarios & Design Considerations

Discrete, Short Circuit Rated IGBT with Diode

Alternative Part Number

  • STGD5NB60K --: 600V N-channel IGBT in TO-252 (DPAK) with similar current rating and built-in fast recovery diode, suitable drop-in replacement for switching applications.
  • IRGB5B60F --: 600V IGBT with integrated fast recovery diode in TO-220, comparable VCE(sat) and current capability, widely used alternative for similar power switching circuits.
  • FGD5N60 --: 600V N-channel IGBT with fast recovery diode, similar package and ratings, from a major supplier with good availability as a cross-reference.
  • FQPF5N60C --: 600V N-channel MOSFET in TO-220F package with similar Rds(on) and current rating, widely available and a common drop-in for 5N60-class devices.
  • IRFBC40 --: 600V N-channel MOSFET rated around 6A, comparable switching characteristics and package options, suitable as a functional substitute.
  • STP5NK60Z --: 600V 5A N-channel MOSFET in TO-220, close voltage and current ratings with similar gate charge, a reliable alternative from a major vendor.

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