IGBTs & DuoPacks The **SGW20N60HS** is a power MOSFET manufactured by **Infineon Technologies**. Below are its key specifications, descriptions, and features:
### **Specifications:**
- **Manufacturer:** Infineon Technologies
- **Type:** N-Channel Power MOSFET
- **Voltage Rating (VDS):** 600V
- **Current Rating (ID):** 20A (at 25°C)
- **Power Dissipation (PD):** 230W (at 25°C)
- **On-Resistance (RDS(on)):** 0.19Ω (max) at VGS = 10V
- **Gate Threshold Voltage (VGS(th)):** 3V (min) to 5V (max)
- **Gate Charge (Qg):** 50nC (typical)
- **Input Capacitance (Ciss):** 1500pF (typical)
- **Output Capacitance (Coss):** 180pF (typical)
- **Reverse Transfer Capacitance (Crss):** 15pF (typical)
- **Package:** TO-247
### **Descriptions:**
- The **SGW20N60HS** is a high-voltage, N-channel MOSFET designed for power switching applications.
- It is optimized for high efficiency and fast switching performance.
- Suitable for applications such as power supplies, motor control, and inverters.
### **Features:**
- **Low On-Resistance (RDS(on)):** Ensures minimal conduction losses.
- **Fast Switching Speed:** Enhances efficiency in high-frequency applications.
- **High Voltage Capability:** Supports up to 600V, making it ideal for industrial and automotive applications.
- **Avalanche Energy Rated:** Provides robustness against inductive load switching.
- **Low Gate Charge (Qg):** Reduces switching losses and improves efficiency.
- **TO-247 Package:** Offers excellent thermal performance and mechanical strength.
This MOSFET is commonly used in high-power applications where reliability and efficiency are critical.
