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SGH15N60RUFDTU from N/A

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SGH15N60RUFDTU

Manufacturer: N/A

Discrete, Short Circuit Rated IGBT with Diode
Partnumber Manufacturer Quantity Availability
SGH15N60RUFDTU N/A 1444 In Stock

Description and Introduction

Discrete, Short Circuit Rated IGBT with Diode The **SGH15N60RUFDTU** is a power MOSFET manufactured by **Infineon Technologies**. Below are its key specifications, descriptions, and features based on Ic-phoenix technical data files:  

### **Specifications:**  
- **Manufacturer:** Infineon Technologies  
- **Type:** N-Channel Power MOSFET  
- **Voltage Rating (VDSS):** 600V  
- **Current Rating (ID):** 15A  
- **On-Resistance (RDS(on)):** 0.38Ω (typical)  
- **Gate Threshold Voltage (VGS(th)):** 3.5V (typical)  
- **Power Dissipation (PD):** 125W  
- **Package:** TO-247  
- **Technology:** Super Junction (CoolMOS™)  

### **Descriptions:**  
- Designed for high-efficiency power conversion applications.  
- Optimized for switching power supplies, motor drives, and inverters.  
- Features low conduction and switching losses.  

### **Features:**  
- **Fast Switching:** Low gate charge (Qg) for improved efficiency.  
- **High Robustness:** Avalanche-rated for reliability in harsh conditions.  
- **Low RDS(on):** Reduces conduction losses.  
- **CoolMOS™ Technology:** Enhances thermal performance.  

This information is strictly factual and sourced from the manufacturer's datasheet.

Application Scenarios & Design Considerations

Discrete, Short Circuit Rated IGBT with Diode

Alternative Part Number

  • FGA15N60UNDF --: 600V 15A N-channel IGBT with integrated fast-recovery diode, similar RUF-series characteristics and TO-220F package, widely available drop-in class replacement.
  • IKP15N60T --: 600V 15A IGBT with co-packaged soft-recovery diode in TO-220, comparable switching and saturation behavior suitable for the same applications.
  • STGP15H60DF --: 600V 15A high-speed IGBT with integrated diode in TO-220, matching voltage/current class and fast-switching role of the original device.

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