IGBTs & DuoPacks The SGD06N60 is a power MOSFET manufactured by INF (Infineon Technologies). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:
### **Specifications:**
- **Manufacturer:** INF (Infineon Technologies)
- **Type:** N-Channel Power MOSFET
- **Drain-Source Voltage (VDSS):** 600V
- **Continuous Drain Current (ID):** 6A
- **Pulsed Drain Current (IDM):** 24A
- **Power Dissipation (PD):** 50W
- **Gate-Source Voltage (VGS):** ±30V
- **On-Resistance (RDS(on)):** 1.5Ω (max) at VGS = 10V
- **Threshold Voltage (VGS(th)):** 3V (min), 5V (max)
- **Input Capacitance (Ciss):** 600pF (typ)
- **Output Capacitance (Coss):** 100pF (typ)
- **Reverse Transfer Capacitance (Crss):** 30pF (typ)
- **Turn-On Delay Time (td(on)):** 10ns (typ)
- **Turn-Off Delay Time (td(off)):** 50ns (typ)
- **Operating Temperature Range:** -55°C to +150°C
### **Description:**
The SGD06N60 is a high-voltage N-Channel MOSFET designed for power switching applications. It features low on-resistance and fast switching characteristics, making it suitable for high-efficiency power conversion circuits.
### **Features:**
- **High Voltage Capability:** 600V drain-source voltage rating.
- **Low On-Resistance:** Minimizes conduction losses.
- **Fast Switching Speed:** Enhances efficiency in high-frequency applications.
- **Avalanche Energy Specified:** Ensures ruggedness in inductive load conditions.
- **Low Gate Charge:** Reduces drive requirements and improves switching performance.
- **TO-252 (DPAK) Package:** Compact and suitable for surface-mount applications.
This information is based solely on the manufacturer's datasheet. For detailed application guidelines, refer to the official documentation from Infineon Technologies.
