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SFH320-3 from OSRAM

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SFH320-3

Manufacturer: OSRAM

NPN-Silizium-Fototransistor im SMT TOPLEDa-Gehause Silicon NPN Phototransistor in SMT TOPLEDa-Package

Partnumber Manufacturer Quantity Availability
SFH320-3,SFH3203 OSRAM 2000 In Stock

Description and Introduction

NPN-Silizium-Fototransistor im SMT TOPLEDa-Gehause Silicon NPN Phototransistor in SMT TOPLEDa-Package The SFH320-3 is an infrared emitter (IRED) manufactured by OSRAM. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Specifications:**  
- **Wavelength:** 850 nm (typical)  
- **Radiant Intensity:** 25 mW/sr (typical at 100 mA)  
- **Forward Current:** 100 mA (continuous)  
- **Forward Voltage:** 1.5 V (typical at 100 mA)  
- **Viewing Angle:** ±60°  
- **Package Type:** 3 mm (T-1) clear epoxy package  
- **Operating Temperature Range:** -40°C to +110°C  
- **Storage Temperature Range:** -40°C to +110°C  

### **Description:**  
The SFH320-3 is a high-power infrared emitter designed for applications requiring high radiant intensity in the near-infrared spectrum. It is housed in a standard 3 mm clear epoxy package, making it suitable for various optical sensing and communication systems.  

### **Features:**  
- High radiant intensity for improved signal transmission  
- Wide viewing angle (±60°) for broad emission coverage  
- Reliable performance across a wide temperature range  
- Compatible with automated placement processes  
- RoHS compliant  

This information is based solely on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

NPN-Silizium-Fototransistor im SMT TOPLEDa-Gehause Silicon NPN Phototransistor in SMT TOPLEDa-Package

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