Silicon N-Channel MOSFET The SFF7N60 is a power MOSFET manufactured by SEMIW. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:
### **Specifications:**
- **Manufacturer:** SEMIW
- **Model:** SFF7N60
- **Type:** N-Channel MOSFET
- **Drain-Source Voltage (VDSS):** 600V
- **Continuous Drain Current (ID):** 7A
- **Pulsed Drain Current (IDM):** 28A
- **Power Dissipation (PD):** 125W
- **Gate-Source Voltage (VGS):** ±30V
- **On-Resistance (RDS(on)):** 1.2Ω (max) @ VGS = 10V
- **Threshold Voltage (VGS(th)):** 3V (min) - 5V (max)
- **Input Capacitance (Ciss):** 1000pF (typ)
- **Output Capacitance (Coss):** 150pF (typ)
- **Reverse Transfer Capacitance (Crss):** 30pF (typ)
- **Turn-On Delay Time (td(on)):** 15ns (typ)
- **Turn-Off Delay Time (td(off)):** 60ns (typ)
- **Operating Temperature Range:** -55°C to +150°C
### **Descriptions:**
The SFF7N60 is a high-voltage N-Channel MOSFET designed for power switching applications. It offers low on-resistance, fast switching speed, and high efficiency, making it suitable for power supplies, motor control, and inverters.
### **Features:**
- **High Voltage Capability:** 600V drain-source voltage rating.
- **Low On-Resistance:** Minimizes conduction losses.
- **Fast Switching Speed:** Enhances performance in high-frequency applications.
- **Improved dv/dt Capability:** Ensures robustness in switching circuits.
- **Avalanche Energy Specified:** Provides reliability under inductive load conditions.
- **TO-220F Package:** Facilitates easy mounting and heat dissipation.
This information is strictly based on the manufacturer's datasheet and technical documentation.
