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SEMIX302GB12E4S from SEMIKORN

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SEMIX302GB12E4S

Manufacturer: SEMIKORN

Trench IGBT Modules

Partnumber Manufacturer Quantity Availability
SEMIX302GB12E4S SEMIKORN 35 In Stock

Description and Introduction

Trench IGBT Modules The SEMIX302GB12E4S is a power semiconductor module manufactured by SEMIKRON. Below are the factual details from Ic-phoenix technical data files:  

### **Manufacturer:** SEMIKRON  
### **Part Number:** SEMIX302GB12E4S  

### **Specifications:**  
- **Module Type:** IGBT (Insulated Gate Bipolar Transistor)  
- **Voltage Rating:** 1200V  
- **Current Rating:** 300A  
- **Configuration:** Half-bridge  
- **Number of IGBTs:** 2  
- **Number of Diodes:** 2 (freewheeling diodes)  
- **Isolation Voltage:** 2500V (UL certified)  
- **Thermal Resistance (Junction to Case):** 0.12 K/W  
- **Operating Temperature Range:** -40°C to +150°C  

### **Descriptions & Features:**  
- Designed for high-power switching applications.  
- Low switching and conduction losses for improved efficiency.  
- Compact and robust module design for industrial applications.  
- Press-fit or screw-type terminals for easy mounting.  
- Suitable for motor drives, renewable energy systems, and industrial inverters.  
- Integrated NTC thermistor for temperature monitoring.  

This information is based solely on the available specifications and features of the SEMIX302GB12E4S module.

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