IC Phoenix logo

Home ›  S  › S13 > SBYV26C

SBYV26C from VIS

Fast Delivery, Competitive Price @IC-phoenix

If you need more electronic components or better pricing, we welcome any inquiry.

16.113ms

SBYV26C

Manufacturer: VIS

Glass Passivated Ultrafast Rectifier, Forward Current 1.0A, Reverse Voltage 600V

Partnumber Manufacturer Quantity Availability
SBYV26C VIS 21000 In Stock

Description and Introduction

Glass Passivated Ultrafast Rectifier, Forward Current 1.0A, Reverse Voltage 600V The SBYV26C is a high-speed switching diode manufactured by VIS (Vishay Intertechnology).  

### **Specifications:**  
- **Manufacturer:** VIS (Vishay Intertechnology)  
- **Type:** High-speed switching diode  
- **Package:** SOD-323 (MiniMELF)  
- **Maximum Reverse Voltage (V_R):** 60V  
- **Average Forward Current (I_F(AV)):** 200mA  
- **Peak Forward Surge Current (I_FSM):** 1A (non-repetitive)  
- **Forward Voltage (V_F):** 1V (at 200mA)  
- **Reverse Recovery Time (t_rr):** 4ns (typical)  
- **Operating Temperature Range:** -65°C to +150°C  

### **Descriptions and Features:**  
- Designed for high-speed switching applications  
- Low forward voltage drop  
- Fast reverse recovery time  
- Small SOD-323 package for space-saving designs  
- Suitable for general-purpose rectification and signal processing  
- RoHS compliant  

This diode is commonly used in high-frequency circuits, signal demodulation, and fast-switching power supplies.

Partnumber Manufacturer Quantity Availability
SBYV26C GS 117870 In Stock

Description and Introduction

Glass Passivated Ultrafast Rectifier, Forward Current 1.0A, Reverse Voltage 600V The SBYV26C is a high-speed switching diode manufactured by GS (General Semiconductor). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Specifications:**  
- **Manufacturer:** GS (General Semiconductor)  
- **Type:** High-speed switching diode  
- **Maximum Reverse Voltage (VR):** 70V  
- **Average Forward Current (IF):** 200mA  
- **Peak Forward Surge Current (IFSM):** 4A (non-repetitive)  
- **Forward Voltage Drop (VF):** 1V (at 200mA)  
- **Reverse Recovery Time (trr):** 4ns (typical)  
- **Junction Capacitance (Cj):** 2pF (at 0V, 1MHz)  
- **Operating Temperature Range:** -65°C to +150°C  

### **Description:**  
The SBYV26C is a silicon epitaxial planar diode designed for high-speed switching applications. It is commonly used in circuits requiring fast recovery times, such as signal rectification, clamping, and protection.  

### **Features:**  
- **Fast switching performance**  
- **Low forward voltage drop**  
- **High reliability**  
- **Suitable for surface-mount applications (SOD-323 package)**  

This information is based solely on the manufacturer's datasheet and specifications.

Request Quotation

For immediate assistance, call us at +86 533 2716050 or email [email protected]

Part Number Quantity Target Price($USD) Email Contact Person
We offer highly competitive channel pricing. Get in touch for details.

Specializes in hard-to-find components chips