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SUP85N06-05 from VISHAY

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SUP85N06-05

Manufacturer: VISHAY

N-Channel 60-V (D-S) 175C MOSFET

Partnumber Manufacturer Quantity Availability
SUP85N06-05,SUP85N0605 VISHAY 14 In Stock

Description and Introduction

N-Channel 60-V (D-S) 175C MOSFET The SUP85N06-05 is a power MOSFET manufactured by Vishay. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Specifications:**  
- **Manufacturer:** Vishay  
- **Part Number:** SUP85N06-05  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 60V  
- **Continuous Drain Current (ID):** 85A  
- **Pulsed Drain Current (IDM):** 340A  
- **Power Dissipation (PD):** 200W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 5.0mΩ (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Package:** TO-220AB  

### **Descriptions:**  
- The SUP85N06-05 is a high-performance N-channel MOSFET designed for power switching applications.  
- It is optimized for low on-resistance and high current handling, making it suitable for motor control, power supplies, and DC-DC converters.  

### **Features:**  
- Low on-resistance (RDS(on)) for reduced conduction losses.  
- High current capability (85A continuous).  
- Fast switching performance.  
- Avalanche energy specified for ruggedness in inductive load applications.  
- TO-220AB package for easy mounting and heat dissipation.  

This information is based solely on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

N-Channel 60-V (D-S) 175C MOSFET
Partnumber Manufacturer Quantity Availability
SUP85N06-05,SUP85N0605 15 In Stock

Description and Introduction

N-Channel 60-V (D-S) 175C MOSFET The SUP85N06-05 is a power MOSFET manufactured by Vishay Siliconix. Below are its key specifications, descriptions, and features:

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 60V  
- **Continuous Drain Current (ID):** 85A  
- **Pulsed Drain Current (IDM):** 340A  
- **Power Dissipation (PD):** 200W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 5.5mΩ (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Total Gate Charge (Qg):** 120nC (typical)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  

### **Description:**  
The SUP85N06-05 is an N-channel MOSFET designed for high-power switching applications. It is optimized for low on-resistance and high current handling, making it suitable for power management in automotive, industrial, and consumer electronics.  

### **Features:**  
- **Low On-Resistance:** Ensures minimal power loss in conduction.  
- **High Current Capability:** Supports up to 85A continuous drain current.  
- **Fast Switching:** Suitable for high-frequency applications.  
- **Avalanche Energy Rated:** Enhances reliability in rugged environments.  
- **TO-220 Package:** Provides efficient thermal dissipation.  
- **Lead-Free & RoHS Compliant:** Meets environmental standards.  

This MOSFET is commonly used in DC-DC converters, motor control, and power supply circuits.

Application Scenarios & Design Considerations

N-Channel 60-V (D-S) 175C MOSFET

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