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SUP70N03-09P from VISHAY

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SUP70N03-09P

Manufacturer: VISHAY

N-Channel 30-V (D-S) 175C MOSFET PWM Optimized

Partnumber Manufacturer Quantity Availability
SUP70N03-09P,SUP70N0309P VISHAY 10 In Stock

Description and Introduction

N-Channel 30-V (D-S) 175C MOSFET PWM Optimized The SUP70N03-09P is a power MOSFET manufactured by Vishay. Below are its specifications, descriptions, and features based on Ic-phoenix technical data files:  

### **Specifications:**  
- **Manufacturer:** Vishay  
- **Part Number:** SUP70N03-09P  
- **Type:** N-Channel MOSFET  
- **Drain-Source Voltage (VDSS):** 30V  
- **Continuous Drain Current (ID):** 70A  
- **Pulsed Drain Current (IDM):** 280A  
- **Power Dissipation (PD):** 200W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 9mΩ (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 1V to 3V  
- **Package:** TO-263 (D2PAK)  

### **Descriptions:**  
The SUP70N03-09P is a high-performance N-channel MOSFET designed for power management applications. It offers low on-resistance and high current handling, making it suitable for switching and amplification in power supplies, motor control, and DC-DC converters.  

### **Features:**  
- Low on-resistance (RDS(on)) for reduced conduction losses  
- High current capability (70A continuous)  
- Fast switching performance  
- Enhanced thermal characteristics due to the TO-263 package  
- Suitable for high-efficiency power conversion applications  

For detailed datasheet information, refer to Vishay's official documentation.

Application Scenarios & Design Considerations

N-Channel 30-V (D-S) 175C MOSFET PWM Optimized

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