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SUD10P06-280L from VISHAY

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SUD10P06-280L

Manufacturer: VISHAY

P-Channel 60-V (D-S), 175 grades C MOSFET, Logic Level

Partnumber Manufacturer Quantity Availability
SUD10P06-280L,SUD10P06280L VISHAY 120 In Stock

Description and Introduction

P-Channel 60-V (D-S), 175 grades C MOSFET, Logic Level The SUD10P06-280L is a power MOSFET manufactured by Vishay. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Specifications:**  
- **Manufacturer:** Vishay  
- **Part Number:** SUD10P06-280L  
- **Type:** P-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** -60V  
- **Continuous Drain Current (ID):** -10A  
- **Pulsed Drain Current (IDM):** -40A  
- **Power Dissipation (PD):** 50W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 280mΩ (max) at VGS = -10V  
- **Threshold Voltage (VGS(th)):** -2V to -4V  
- **Package:** TO-252 (DPAK)  

### **Descriptions:**  
- A P-Channel MOSFET designed for power switching applications.  
- Suitable for low-voltage, high-efficiency power management.  

### **Features:**  
- Low on-resistance for reduced conduction losses.  
- Fast switching performance.  
- High power dissipation capability.  
- Avalanche energy rated for ruggedness.  
- Lead (Pb)-free and RoHS compliant.  

This information is based solely on the manufacturer's datasheet. For detailed performance characteristics, refer to Vishay's official documentation.

Application Scenarios & Design Considerations

P-Channel 60-V (D-S), 175 grades C MOSFET, Logic Level
Partnumber Manufacturer Quantity Availability
SUD10P06-280L,SUD10P06280L SIL 1000 In Stock

Description and Introduction

P-Channel 60-V (D-S), 175 grades C MOSFET, Logic Level The SUD10P06-280L is a power MOSFET manufactured by Vishay Siliconix. Below are the factual details from Ic-phoenix technical data files:  

### **Manufacturer:**  
- **Vishay Siliconix**  

### **SIL (Standard Industrial Level) Specifications:**  
- **Voltage Rating (VDS):** 60V  
- **Current Rating (ID):** 10A (continuous)  
- **Power Dissipation (PD):** 50W  
- **RDS(ON) (Drain-Source On-Resistance):** 0.28Ω (max) at VGS = 10V  
- **Gate-Source Voltage (VGS):** ±20V (max)  
- **Threshold Voltage (VGS(th)):** 2V (min), 4V (max)  

### **Descriptions and Features:**  
- **Technology:** TrenchFET® Gen III power MOSFET  
- **Package:** TO-252 (DPAK)  
- **Low On-Resistance:** Optimized for high-efficiency power switching  
- **Fast Switching Speed:** Suitable for high-frequency applications  
- **Avalanche Energy Rated:** Enhances ruggedness in inductive load applications  
- **Lead (Pb)-Free and RoHS Compliant**  

This information is based solely on the manufacturer's datasheet and specifications.

Application Scenarios & Design Considerations

P-Channel 60-V (D-S), 175 grades C MOSFET, Logic Level

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