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SUB75N06-08 from SILICONIX

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SUB75N06-08

Manufacturer: SILICONIX

N-Channel Enhancement-Mode Trans
Partnumber Manufacturer Quantity Availability
SUB75N06-08,SUB75N0608 SILICONIX 300 In Stock

Description and Introduction

N-Channel Enhancement-Mode Trans **Manufacturer:** SILICONIX  

**Part Number:** SUB75N06-08  

**Specifications:**  
- **Type:** N-Channel MOSFET  
- **Drain-Source Voltage (VDSS):** 60V  
- **Continuous Drain Current (ID):** 75A  
- **Pulsed Drain Current (IDM):** 300A  
- **Power Dissipation (PD):** 200W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 8mΩ (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V to 4V  

**Descriptions and Features:**  
- Designed for high-current, high-efficiency switching applications.  
- Low on-resistance for reduced conduction losses.  
- Fast switching performance.  
- Robust and reliable for power management in automotive, industrial, and consumer electronics.  
- TO-263 (D²PAK) package for improved thermal performance.  

(Source: SILICONIX datasheet for SUB75N06-08)

Application Scenarios & Design Considerations

N-Channel Enhancement-Mode Trans

Alternative Part Number

  • IRFZ44N --: Widely available 55V N-channel MOSFET in TO-220 with comparable RDS(on) and current rating, commonly used as a drop-in substitute for 60V automotive-grade MOSFETs.
  • STP60NF06 --: 60V N-channel power MOSFET in TO-220 with similar voltage class and low on-resistance, suitable replacement for switching and motor drive applications.
  • FQP50N06 --: 60V N-channel MOSFET in TO-220 rated around 50A, matching the voltage and current class of the original part for general power switching.

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