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STW9NK90Z from ST,ST Microelectronics

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STW9NK90Z

Manufacturer: ST

N-CHANNEL 900V 1.1 OHM 8A TO-220 TO-220FP TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET

Partnumber Manufacturer Quantity Availability
STW9NK90Z ,STW9NK90Z ST 6000 In Stock

Description and Introduction

N-CHANNEL 900V 1.1 OHM 8A TO-220 TO-220FP TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET The **STW9NK90Z** is a power MOSFET manufactured by **STMicroelectronics (ST)**. Below are its key specifications, descriptions, and features:

### **Specifications:**  
- **Drain-Source Voltage (VDS):** 900V  
- **Continuous Drain Current (ID):** 7.5A (at 25°C)  
- **Pulsed Drain Current (IDM):** 30A  
- **Power Dissipation (PD):** 190W  
- **Gate-Source Voltage (VGS):** ±30V  
- **On-Resistance (RDS(on)):** 1.2Ω (max) at VGS = 10V  
- **Input Capacitance (Ciss):** 900pF (typical)  
- **Output Capacitance (Coss):** 80pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 20pF (typical)  
- **Turn-On Delay Time (td(on)):** 15ns (typical)  
- **Turn-Off Delay Time (td(off)):** 60ns (typical)  
- **Operating Junction Temperature (TJ):** -55°C to 150°C  

### **Description:**  
The **STW9NK90Z** is a **N-channel** power MOSFET designed for high-voltage, high-speed switching applications. It is optimized for efficiency in power supplies, motor control, and industrial applications.  

### **Features:**  
- **High voltage capability (900V)**  
- **Low gate charge** for fast switching  
- **Low on-resistance** for reduced conduction losses  
- **Avalanche ruggedness** for improved reliability  
- **100% avalanche tested**  
- **Zener-protected gate** for enhanced robustness  
- **TO-247 package** for better thermal performance  

This MOSFET is suitable for applications requiring high efficiency and reliability in demanding environments.

Application Scenarios & Design Considerations

N-CHANNEL 900V 1.1 OHM 8A TO-220 TO-220FP TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET

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