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STW8NC90Z from ST,ST Microelectronics

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STW8NC90Z

Manufacturer: ST

N-CHANNEL 900V 1.1OHM 7.6A TO-247 ZENER-PROTECTED POWERMESH III MOSFET

Partnumber Manufacturer Quantity Availability
STW8NC90Z ST 900 In Stock

Description and Introduction

N-CHANNEL 900V 1.1OHM 7.6A TO-247 ZENER-PROTECTED POWERMESH III MOSFET The STW8NC90Z is a power MOSFET manufactured by STMicroelectronics. Below are the specifications, descriptions, and features based on Ic-phoenix technical data files:

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 900V  
- **Continuous Drain Current (ID):** 8A  
- **Pulsed Drain Current (IDM):** 32A  
- **Power Dissipation (PD):** 190W  
- **Gate-Source Voltage (VGS):** ±30V  
- **On-Resistance (RDS(on)):** 1.2Ω (max) at VGS = 10V  
- **Input Capacitance (Ciss):** 680pF (typical)  
- **Output Capacitance (Coss):** 90pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 15pF (typical)  
- **Turn-On Delay Time (td(on)):** 12ns (typical)  
- **Turn-Off Delay Time (td(off)):** 60ns (typical)  
- **Operating Junction Temperature (TJ):** -55°C to 150°C  

### **Description:**  
The STW8NC90Z is an N-channel Power MOSFET designed for high-voltage applications. It is optimized for high efficiency and fast switching performance, making it suitable for power supplies, inverters, and motor control applications.  

### **Features:**  
- **High Voltage Capability:** 900V breakdown voltage for robust performance.  
- **Low Gate Charge:** Ensures fast switching and reduced switching losses.  
- **Low On-Resistance:** Minimizes conduction losses.  
- **Avalanche Energy Specified:** Enhances reliability in harsh conditions.  
- **100% Avalanche Tested:** Ensured ruggedness under high-energy conditions.  
- **TO-247 Package:** Provides excellent thermal performance.  

This information is strictly based on the manufacturer's datasheet and specifications.

Application Scenarios & Design Considerations

N-CHANNEL 900V 1.1OHM 7.6A TO-247 ZENER-PROTECTED POWERMESH III MOSFET

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