N The STW6NA80 is a power MOSFET manufactured by STMicroelectronics. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:
### **Specifications:**
- **Manufacturer:** STMicroelectronics
- **Type:** N-Channel Power MOSFET
- **Drain-Source Voltage (VDSS):** 800V
- **Continuous Drain Current (ID):** 6A
- **Pulsed Drain Current (IDM):** 24A
- **Power Dissipation (PD):** 150W
- **Gate-Source Voltage (VGS):** ±30V
- **On-Resistance (RDS(on)):** 1.5Ω (max) at VGS = 10V
- **Threshold Voltage (VGS(th)):** 3V (min), 5V (max)
- **Input Capacitance (Ciss):** 750pF (typ)
- **Output Capacitance (Coss):** 100pF (typ)
- **Reverse Transfer Capacitance (Crss):** 15pF (typ)
- **Turn-On Delay Time (td(on)):** 15ns (typ)
- **Turn-Off Delay Time (td(off)):** 50ns (typ)
- **Operating Temperature Range:** -55°C to 150°C
- **Package:** TO-247
### **Descriptions:**
- The STW6NA80 is a high-voltage N-Channel MOSFET designed for power switching applications.
- It is optimized for high efficiency and fast switching performance.
- Suitable for use in power supplies, motor control, and other high-voltage applications.
### **Features:**
- **High Voltage Capability (800V)**
- **Low Gate Charge**
- **Fast Switching Speed**
- **Low On-Resistance**
- **Avalanche Energy Specified**
- **Improved dv/dt Capability**
This information is based on the manufacturer's datasheet and technical documentation.
