N-CHANNEL 500V The STW45NM50 is an N-channel MOSFET manufactured by STMicroelectronics. Below are the specifications, descriptions, and features based on the factual information from Ic-phoenix technical data files:
### **Specifications:**
- **Drain-Source Voltage (VDS):** 500V
- **Continuous Drain Current (ID):** 45A
- **Pulsed Drain Current (IDM):** 180A
- **Power Dissipation (Ptot):** 300W
- **Gate-Source Voltage (VGS):** ±30V
- **On-Resistance (RDS(on)):** 0.055Ω (max) at VGS = 10V
- **Threshold Voltage (VGS(th)):** 3V (min), 5V (max)
- **Input Capacitance (Ciss):** 3000pF (typ)
- **Output Capacitance (Coss):** 500pF (typ)
- **Reverse Transfer Capacitance (Crss):** 50pF (typ)
- **Turn-On Delay Time (td(on)):** 15ns (typ)
- **Turn-Off Delay Time (td(off)):** 60ns (typ)
- **Operating Junction Temperature (Tj):** -55°C to +150°C
### **Description:**
The STW45NM50 is a high-voltage N-channel power MOSFET designed for high-efficiency switching applications. It features low on-resistance, fast switching speed, and high ruggedness, making it suitable for power supplies, motor drives, and industrial applications.
### **Features:**
- **Low RDS(on):** Enhances efficiency by minimizing conduction losses.
- **High Current Capability:** Supports up to 45A continuous drain current.
- **Fast Switching:** Optimized for high-frequency switching applications.
- **Avalanche Ruggedness:** Ensures reliability under high-energy conditions.
- **Low Gate Charge:** Reduces driving losses and improves switching performance.
- **TO-247 Package:** Provides excellent thermal dissipation.
This information is strictly based on the manufacturer's datasheet and does not include any additional recommendations or interpretations.
