N-CHANNEL 600V The STW30NM60D is a power MOSFET manufactured by STMicroelectronics. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:
### **Specifications:**
- **Drain-Source Voltage (VDS):** 600V
- **Continuous Drain Current (ID):** 30A (at 25°C)
- **Pulsed Drain Current (IDM):** 120A
- **Power Dissipation (PD):** 300W (at 25°C)
- **Gate-Source Voltage (VGS):** ±30V
- **On-Resistance (RDS(on)):** 0.09Ω (max at VGS = 10V, ID = 15A)
- **Threshold Voltage (VGS(th)):** 3V (min) – 5V (max)
- **Input Capacitance (Ciss):** 2100pF (typical)
- **Output Capacitance (Coss):** 350pF (typical)
- **Reverse Transfer Capacitance (Crss):** 50pF (typical)
- **Turn-On Delay Time (td(on)):** 15ns (typical)
- **Turn-Off Delay Time (td(off)):** 50ns (typical)
- **Operating Temperature Range:** -55°C to 150°C
- **Package:** TO-247
### **Description:**
The STW30NM60D is a high-voltage N-channel Power MOSFET designed for high-efficiency switching applications. It features low on-resistance, fast switching performance, and high ruggedness, making it suitable for power supplies, motor drives, and inverters.
### **Features:**
- **Low On-Resistance:** Minimizes conduction losses.
- **Fast Switching:** Optimized for high-frequency applications.
- **Avalanche Ruggedness:** Ensures reliability under harsh conditions.
- **Low Gate Charge:** Reduces switching losses.
- **Improved dv/dt Capability:** Enhances noise immunity.
- **100% Avalanche Tested:** Guarantees robustness.
This information is based on the manufacturer's datasheet and technical documentation.
