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STW15NA50 from ST,ST Microelectronics

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STW15NA50

Manufacturer: ST

OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN

Partnumber Manufacturer Quantity Availability
STW15NA50 ST 1465 In Stock

Description and Introduction

OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN The STW15NA50 is a Power MOSFET manufactured by STMicroelectronics. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 500V  
- **Continuous Drain Current (ID):** 15A  
- **Pulsed Drain Current (IDM):** 60A  
- **Power Dissipation (PD):** 150W  
- **Gate-Source Voltage (VGS):** ±30V  
- **On-Resistance (RDS(on)):** 0.35Ω (max) at VGS = 10V  
- **Input Capacitance (Ciss):** 1000pF (typ)  
- **Output Capacitance (Coss):** 150pF (typ)  
- **Reverse Transfer Capacitance (Crss):** 20pF (typ)  
- **Turn-On Delay Time (td(on)):** 10ns (typ)  
- **Turn-Off Delay Time (td(off)):** 50ns (typ)  
- **Operating Junction Temperature (TJ):** -55°C to +150°C  

### **Description:**  
The STW15NA50 is an N-channel Power MOSFET designed for high-voltage, high-speed switching applications. It is optimized for efficiency in power conversion systems, motor control, and switching power supplies.  

### **Features:**  
- **High Voltage Capability:** 500V breakdown voltage for robust performance in high-power applications.  
- **Low On-Resistance:** Minimizes conduction losses for improved efficiency.  
- **Fast Switching:** Optimized gate charge for high-speed switching performance.  
- **Avalanche Energy Rated:** Ensures reliability under high-energy transient conditions.  
- **TO-247 Package:** Provides excellent thermal dissipation for high-power applications.  

This information is strictly based on the manufacturer's datasheet.

Application Scenarios & Design Considerations

OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN

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