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STW120NF10 from ST,ST Microelectronics

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STW120NF10

Manufacturer: ST

N-channel 100 V, 0.009 Ohm, 110 A, STripFET(TM) II Power MOSFET in TO-247 package

Partnumber Manufacturer Quantity Availability
STW120NF10 ST 120 In Stock

Description and Introduction

N-channel 100 V, 0.009 Ohm, 110 A, STripFET(TM) II Power MOSFET in TO-247 package The STW120NF10 is an N-channel Power MOSFET manufactured by STMicroelectronics.  

### **Specifications:**  
- **Drain-Source Voltage (VDS):** 100V  
- **Continuous Drain Current (ID):** 120A  
- **Pulsed Drain Current (IDM):** 480A  
- **Power Dissipation (PD):** 700W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 7.5mΩ (max) at VGS = 10V  
- **Total Gate Charge (Qg):** 180nC (typical)  
- **Operating Junction Temperature (TJ):** -55°C to 175°C  
- **Package:** TO-247  

### **Descriptions and Features:**  
- **Low On-Resistance:** Ensures minimal conduction losses.  
- **High Current Capability:** Suitable for high-power applications.  
- **Fast Switching:** Optimized for efficiency in switching applications.  
- **Avalanche Rated:** Robust against high-energy transients.  
- **Applications:** Used in power supplies, motor control, DC-DC converters, and automotive systems.  

This information is based on the manufacturer's datasheet. For detailed performance curves and application notes, refer to STMicroelectronics' official documentation.

Application Scenarios & Design Considerations

N-channel 100 V, 0.009 Ohm, 110 A, STripFET(TM) II Power MOSFET in TO-247 package

Alternative Part Number

  • IRFP4110PBF --: 100V N-channel power MOSFET in TO-247 with very low RDS(on) and high current capability, a well-established drop-in class replacement for the STW120NF10.
  • FDP047AN08A0 --: 75V N-channel MOSFET in TO-247 with low on-resistance and high current rating, suitable for similar high-power switching applications.
  • IXTH120N10 --: 100V N-channel MOSFET in TO-247 rated for high drain current, matching the voltage and package of the original device.

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