N-CHANNEL 800 V The STW11NM80 is an N-channel MOSFET manufactured by STMicroelectronics (ST). Below are its specifications, descriptions, and features based on factual data:
### **Specifications:**
- **Manufacturer:** STMicroelectronics (ST)
- **Type:** N-channel Power MOSFET
- **Drain-Source Voltage (VDSS):** 800V
- **Continuous Drain Current (ID):** 11A
- **Pulsed Drain Current (IDM):** 44A
- **Power Dissipation (PD):** 300W
- **Gate-Source Voltage (VGS):** ±30V
- **On-Resistance (RDS(on)):** 0.45Ω (max) at VGS = 10V
- **Threshold Voltage (VGS(th)):** 3V (min), 5V (max)
- **Input Capacitance (Ciss):** 1800pF
- **Output Capacitance (Coss):** 300pF
- **Reverse Transfer Capacitance (Crss):** 50pF
- **Turn-On Delay Time (td(on)):** 15ns
- **Turn-Off Delay Time (td(off)):** 60ns
- **Operating Temperature Range:** -55°C to 150°C
- **Package:** TO-247
### **Descriptions:**
The STW11NM80 is a high-voltage N-channel MOSFET designed for power switching applications. It features low on-resistance and high switching performance, making it suitable for high-efficiency power supplies, inverters, and motor control circuits.
### **Features:**
- **High Voltage Capability:** 800V breakdown voltage for robust performance in high-voltage circuits.
- **Low On-Resistance:** Minimizes conduction losses for improved efficiency.
- **Fast Switching:** Optimized for high-frequency switching applications.
- **Avalanche Energy Specified:** Enhanced ruggedness for reliable operation in harsh conditions.
- **TO-247 Package:** Provides excellent thermal performance for high-power dissipation.
This information is based solely on the manufacturer's datasheet and technical specifications.
