N-CHANNEL 600V The **STW10NK60Z** is a power MOSFET manufactured by **STMicroelectronics (STM)**. Below are its specifications, descriptions, and features based on factual information from Ic-phoenix technical data files:
### **Specifications:**
- **Type:** N-channel Power MOSFET
- **Technology:** MDmesh™ II
- **Drain-Source Voltage (VDSS):** 600V
- **Continuous Drain Current (ID):** 10A
- **Pulsed Drain Current (IDM):** 40A
- **Power Dissipation (Ptot):** 150W (at 25°C)
- **Gate-Source Voltage (VGS):** ±30V
- **On-Resistance (RDS(on)):** 0.65Ω (max) at VGS = 10V
- **Total Gate Charge (Qg):** 30nC (typ)
- **Input Capacitance (Ciss):** 1200pF (typ)
- **Output Capacitance (Coss):** 120pF (typ)
- **Reverse Transfer Capacitance (Crss):** 30pF (typ)
- **Turn-On Delay Time (td(on)):** 12ns (typ)
- **Turn-Off Delay Time (td(off)):** 50ns (typ)
- **Operating Junction Temperature (TJ):** -55°C to +150°C
### **Description:**
The **STW10NK60Z** is a high-voltage N-channel MOSFET designed for high-efficiency switching applications. It utilizes STMicroelectronics' **MDmesh™ II** technology, which reduces conduction losses and improves switching performance. The device is optimized for applications such as **switch-mode power supplies (SMPS), lighting, motor control, and industrial systems**.
### **Features:**
- **Low On-Resistance (RDS(on))** for reduced conduction losses.
- **Fast Switching Performance** due to low gate charge (Qg).
- **High dv/dt Capability** for robust operation in switching circuits.
- **Avalanche-Rugged Design** ensures reliability under high-energy conditions.
- **100% Avalanche Tested** for enhanced robustness.
- **Low Gate Drive Requirements** (VGS = 10V).
- **TO-247 Package** for efficient thermal dissipation.
This MOSFET is suitable for **high-voltage, high-frequency applications** where efficiency and reliability are critical.
