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STV160NF02L from STM,ST Microelectronics

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STV160NF02L

Manufacturer: STM

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Partnumber Manufacturer Quantity Availability
STV160NF02L STM 40 In Stock

Description and Introduction

N The **STV160NF02L** is a power MOSFET manufactured by **STM (STMicroelectronics)**. Below are the factual details from Ic-phoenix technical data files:  

### **Specifications:**  
- **Manufacturer:** STMicroelectronics (STM)  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDS):** 20V  
- **Continuous Drain Current (ID):** 160A  
- **Pulsed Drain Current (IDM):** 640A  
- **Power Dissipation (PD):** 200W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 1.6mΩ (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 1V (min), 2V (max)  
- **Package:** TO-220  

### **Descriptions & Features:**  
- Designed for **high-efficiency power switching** applications.  
- **Low on-resistance (RDS(on))** for reduced conduction losses.  
- **Fast switching** performance suitable for DC-DC converters, motor control, and power management.  
- **Avalanche ruggedness** for improved reliability in harsh conditions.  
- **Low gate charge** for efficient high-frequency operation.  
- **Lead-free and RoHS compliant**.  

For exact application details, refer to the official STMicroelectronics datasheet.

Application Scenarios & Design Considerations

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Alternative Part Number

  • IRL3803 --: N-channel logic-level MOSFET with very low RDS(on) (~6 mOhm) and 30 V rating, suitable for similar low-voltage high-current switching applications.
  • FDP8870 --: 30 V N-channel power MOSFET with low on-resistance and high current capability, a common substitute in low-voltage power switching designs.
  • PSMN2R8-25MLC --: 25 V logic-level N-channel MOSFET with ultra-low RDS(on), usable in comparable high-current low-voltage switching circuits.

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