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STU3030NL from SAMHOP

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STU3030NL

Manufacturer: SAMHOP

N-Channel Logic Level E nhancement Mode Field Effect Transistor

Partnumber Manufacturer Quantity Availability
STU3030NL SAMHOP 789 In Stock

Description and Introduction

N-Channel Logic Level E nhancement Mode Field Effect Transistor The part **STU3030NL** is manufactured by **SAMHOP**. Below are the specifications, descriptions, and features based on Ic-phoenix technical data files:  

### **Specifications:**  
- **Manufacturer:** SAMHOP  
- **Part Number:** STU3030NL  
- **Type:** Schottky Barrier Diode  
- **Package:** TO-277 (SMB Flat Lead)  
- **Maximum Average Forward Current (IF(AV)):** 30A  
- **Peak Forward Surge Current (IFSM):** 300A  
- **Reverse Voltage (VR):** 30V  
- **Forward Voltage Drop (VF):** 0.55V (typical at 15A)  
- **Reverse Leakage Current (IR):** 0.5mA (typical at 30V)  
- **Operating Junction Temperature (TJ):** -55°C to +150°C  
- **Storage Temperature (TSTG):** -55°C to +150°C  

### **Description:**  
The **STU3030NL** is a Schottky Barrier Rectifier diode designed for high-efficiency power applications. It features low forward voltage drop and fast switching capabilities, making it suitable for switching power supplies, DC-DC converters, and reverse polarity protection circuits.  

### **Features:**  
- **Low Forward Voltage Drop** for reduced power loss.  
- **High Current Capability** (30A continuous).  
- **Fast Switching Speed** for improved efficiency.  
- **High Surge Current Capacity** (300A peak).  
- **Lead-Free and RoHS Compliant.**  

For detailed electrical characteristics and mechanical dimensions, refer to the official datasheet from SAMHOP.

Application Scenarios & Design Considerations

N-Channel Logic Level E nhancement Mode Field Effect Transistor

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