N-CHANNEL 30V -0.018 Ohm The **STS8C5H30L** is a power MOSFET manufactured by **STMicroelectronics (STM)**. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:
### **Manufacturer:**
- **STMicroelectronics (STM)**
### **Specifications:**
- **Type:** N-channel Power MOSFET
- **Drain-Source Voltage (VDSS):** 30V
- **Continuous Drain Current (ID):** 8A
- **Pulsed Drain Current (IDM):** 32A
- **Power Dissipation (PD):** 2.5W
- **Gate-Source Voltage (VGS):** ±20V
- **On-Resistance (RDS(on)):**
- 5.5mΩ (max) at VGS = 10V
- 7.5mΩ (max) at VGS = 4.5V
- **Threshold Voltage (VGS(th)):** 1.5V (min) – 2.5V (max)
- **Total Gate Charge (Qg):** 14nC (typ)
- **Input Capacitance (Ciss):** 950pF (typ)
- **Output Capacitance (Coss):** 350pF (typ)
- **Reverse Transfer Capacitance (Crss):** 50pF (typ)
- **Switching Characteristics:**
- Turn-on Delay Time (td(on)): 10ns (typ)
- Turn-off Delay Time (td(off)): 30ns (typ)
- **Package:** **PowerFLAT™ 5x6** (5mm x 6mm, surface-mount)
### **Description:**
- The **STS8C5H30L** is a **low-voltage N-channel MOSFET** optimized for high-efficiency power switching applications.
- It features **low on-resistance (RDS(on))** and **fast switching performance**, making it suitable for DC-DC converters, motor control, and power management circuits.
### **Features:**
- **Low RDS(on)** for reduced conduction losses.
- **Fast switching speed** for improved efficiency.
- **Avalanche ruggedness** for enhanced reliability.
- **Low gate charge** for reduced drive requirements.
- **Lead-free and RoHS compliant** packaging.
This information is based on STMicroelectronics' official datasheet for the **STS8C5H30L** MOSFET.
