N-CHANNEL 60V The STS5NF60L is an N-channel Power MOSFET manufactured by STMicroelectronics. Below are the specifications, descriptions, and features based on Ic-phoenix technical data files:
### **Specifications:**
- **Drain-Source Voltage (VDSS):** 60V
- **Continuous Drain Current (ID):** 5A
- **Pulsed Drain Current (IDM):** 20A
- **Power Dissipation (PD):** 35W
- **Gate-Source Voltage (VGS):** ±20V
- **On-Resistance (RDS(on)):** 0.15Ω (max) at VGS = 10V
- **Threshold Voltage (VGS(th)):** 2V (min) to 4V (max)
- **Total Gate Charge (Qg):** 12nC (typ)
- **Input Capacitance (Ciss):** 450pF (typ)
- **Output Capacitance (Coss):** 100pF (typ)
- **Reverse Transfer Capacitance (Crss):** 50pF (typ)
- **Turn-On Delay Time (td(on)):** 10ns (typ)
- **Turn-Off Delay Time (td(off)):** 35ns (typ)
- **Operating Junction Temperature (TJ):** -55°C to +150°C
### **Description:**
The STS5NF60L is a Power MOSFET designed for high-efficiency switching applications. It features low on-resistance and fast switching characteristics, making it suitable for power management in DC-DC converters, motor control, and other power applications.
### **Features:**
- **Low On-Resistance:** Minimizes conduction losses.
- **Fast Switching Speed:** Enhances efficiency in high-frequency applications.
- **Avalanche Ruggedness:** Improved reliability under inductive load conditions.
- **Logic-Level Gate Drive:** Can be driven by low-voltage control signals (as low as 4.5V).
- **Low Gate Charge:** Reduces switching losses.
- **Lead-Free & RoHS Compliant:** Environmentally friendly.
The device is available in a TO-252 (DPAK) package.
(Note: All data is based on the manufacturer's official datasheet.)
