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STS2308A from SAMHOP

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STS2308A

Manufacturer: SAMHOP

N-Channel Enhancement Mode Field Effect Transistor

Partnumber Manufacturer Quantity Availability
STS2308A SAMHOP 33000 In Stock

Description and Introduction

N-Channel Enhancement Mode Field Effect Transistor The part **STS2308A** is manufactured by **SAMHOP**.  

### **Specifications:**  
- **Type:** Schottky Barrier Diode  
- **Package:** SOD-123FL  
- **Maximum Reverse Voltage (VR):** 30V  
- **Average Forward Current (IF):** 2A  
- **Peak Forward Surge Current (IFSM):** 50A  
- **Forward Voltage (VF):** 0.55V (at 2A)  
- **Reverse Leakage Current (IR):** 0.5mA (at 30V)  
- **Operating Temperature Range:** -55°C to +150°C  

### **Descriptions:**  
The **STS2308A** is a Schottky barrier diode designed for high-efficiency rectification in power supply applications. It features low forward voltage drop and fast switching characteristics, making it suitable for high-frequency circuits.  

### **Features:**  
- **Low forward voltage drop** for reduced power loss  
- **High current capability** (2A continuous)  
- **Fast switching speed** for high-frequency applications  
- **High thermal stability** with a wide operating temperature range  
- **Compact SOD-123FL package** for space-saving PCB designs  

This information is based solely on the provided knowledge base.

Application Scenarios & Design Considerations

N-Channel Enhancement Mode Field Effect Transistor

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