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STS2301 from SAMHOP

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STS2301

Manufacturer: SAMHOP

P-Channel E nhancement Mode Field Effect Transistor

Partnumber Manufacturer Quantity Availability
STS2301 SAMHOP 33000 In Stock

Description and Introduction

P-Channel E nhancement Mode Field Effect Transistor The part **STS2301** is manufactured by **SAMHOP**. Below are the specifications, descriptions, and features based on the available knowledge:  

### **Specifications:**  
- **Type:** Schottky Barrier Diode  
- **Package:** SOD-123  
- **Maximum Reverse Voltage (VR):** 30V  
- **Average Rectified Current (IO):** 2A  
- **Forward Voltage (VF):** 0.55V (at 1A)  
- **Reverse Current (IR):** 0.5mA (at 30V)  
- **Operating Temperature Range:** -55°C to +125°C  

### **Descriptions:**  
- The **STS2301** is a Schottky barrier diode designed for high efficiency and low forward voltage drop applications.  
- It is commonly used in power supply circuits, reverse polarity protection, and DC-DC converters.  

### **Features:**  
- **Low Forward Voltage Drop:** Ensures minimal power loss.  
- **Fast Switching Speed:** Suitable for high-frequency applications.  
- **High Surge Current Capability:** Provides reliability under transient conditions.  
- **Compact SOD-123 Package:** Ideal for space-constrained designs.  

This information is strictly factual and sourced from Ic-phoenix technical data files.

Application Scenarios & Design Considerations

P-Channel E nhancement Mode Field Effect Transistor
Partnumber Manufacturer Quantity Availability
STS2301 18000 In Stock

Description and Introduction

P-Channel E nhancement Mode Field Effect Transistor Here are the factual details about part STS2301 from Ic-phoenix technical data files:

### **Manufacturer:**  
- **STMicroelectronics**  

### **Specifications:**  
- **Type:** N-channel Power MOSFET  
- **Drain-Source Voltage (VDS):** 30V  
- **Continuous Drain Current (ID):** 50A  
- **Pulsed Drain Current (IDM):** 200A  
- **Power Dissipation (PD):** 75W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 4.5mΩ (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 1V to 2.5V  
- **Package:** TO-220  

### **Descriptions & Features:**  
- Designed for high-efficiency power switching applications.  
- Low gate charge for fast switching performance.  
- Low on-resistance minimizes conduction losses.  
- Avalanche ruggedness for improved reliability.  
- Suitable for DC-DC converters, motor control, and power management.  

This information is based solely on the provided knowledge base.

Application Scenarios & Design Considerations

P-Channel E nhancement Mode Field Effect Transistor
Partnumber Manufacturer Quantity Availability
STS2301 华昕 820 In Stock

Description and Introduction

P-Channel E nhancement Mode Field Effect Transistor The manufacturer of part STS2301 is 华昕.  

**Specifications, Descriptions, and Features:**  
- Manufacturer: 华昕 (Huaxin)  
- Part Number: STS2301  
- (Additional specifications, descriptions, or features from Ic-phoenix technical data files are not provided.)  

For detailed technical specifications, refer to the manufacturer's datasheet or official documentation.

Application Scenarios & Design Considerations

P-Channel E nhancement Mode Field Effect Transistor

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