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STS1DNC45 from STM,ST Microelectronics

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STS1DNC45

Manufacturer: STM, ST

DUAL N-CHANNEL 450V

Partnumber Manufacturer Quantity Availability
STS1DNC45 STM, ST 16135 In Stock

Description and Introduction

DUAL N-CHANNEL 450V The STS1DNC45 is a Schottky diode manufactured by STMicroelectronics. Below are the specifications, descriptions, and features based on factual information from Ic-phoenix technical data files:  

### **Specifications:**  
- **Manufacturer:** STMicroelectronics  
- **Part Number:** STS1DNC45  
- **Type:** Schottky Diode  
- **Configuration:** Single  
- **Reverse Voltage (VR):** 45 V  
- **Average Forward Current (IF(AV)):** 1 A  
- **Peak Forward Surge Current (IFSM):** 30 A (non-repetitive)  
- **Forward Voltage Drop (VF):** 0.49 V (at 1 A)  
- **Reverse Leakage Current (IR):** 0.5 mA (at 45 V)  
- **Operating Junction Temperature (Tj):** -65°C to +125°C  
- **Package:** SOD-123 (Surface Mount)  

### **Descriptions:**  
- The STS1DNC45 is a high-efficiency Schottky diode designed for low-voltage, high-frequency applications.  
- It is optimized for power management, switching, and reverse polarity protection circuits.  
- The SOD-123 package provides compactness and suitability for automated assembly processes.  

### **Features:**  
- **Low Forward Voltage Drop:** Ensures minimal power loss.  
- **Fast Switching Speed:** Ideal for high-frequency applications.  
- **High Surge Current Capability:** Withstands transient overloads.  
- **Low Reverse Leakage:** Improves efficiency in power-sensitive designs.  
- **RoHS Compliant:** Meets environmental standards.  

This information is strictly based on the available technical data for the STS1DNC45 Schottky diode by STMicroelectronics.

Application Scenarios & Design Considerations

DUAL N-CHANNEL 450V

Alternative Part Number

  • SI4435DY-T1-E3 --: P-channel MOSFET in SO-8 with comparable voltage and current ratings, widely available and pin-compatible for many switching applications.
  • FDS4935A --: Dual P-channel MOSFET in SO-8 offering similar RDS(on) and current handling, suitable as a functional substitute in load-switch circuits.
  • IRF7416TRPBF --: P-channel MOSFET in SO-8 with comparable breakdown voltage and current capability, a common drop-in alternative for similar power management designs.
  • STD1NC45 --: Same ST DPAK-packaged N-channel MOSFET family with comparable 450V rating and low current capability, making it a close functional substitute.
  • IRFRC20 --: Similar 600V-class N-channel MOSFET in DPAK with low current rating, suitable for high-voltage small-signal switching applications.
  • FQD1N60 --: 600V N-channel MOSFET in DPAK with 1A-class current rating, a widely available alternative for similar high-voltage switching duties.

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