Sensitive Gate Triacs The STR4A60S is a power MOSFET manufactured by SEMIWELL. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:
### **Specifications:**
- **Manufacturer:** SEMIWELL
- **Type:** N-Channel Power MOSFET
- **Drain-Source Voltage (VDS):** 600V
- **Continuous Drain Current (ID):** 4A
- **Pulsed Drain Current (IDM):** 16A
- **Power Dissipation (PD):** 50W
- **Gate-Source Voltage (VGS):** ±30V
- **On-Resistance (RDS(on)):** 2.5Ω (max) @ VGS = 10V
- **Threshold Voltage (VGS(th)):** 3V (min) – 5V (max)
- **Input Capacitance (Ciss):** 300pF (typical)
- **Output Capacitance (Coss):** 50pF (typical)
- **Reverse Transfer Capacitance (Crss):** 10pF (typical)
- **Turn-On Delay Time (td(on)):** 15ns (typical)
- **Turn-Off Delay Time (td(off)):** 40ns (typical)
- **Operating Temperature Range:** -55°C to +150°C
### **Descriptions:**
- The STR4A60S is a high-voltage N-Channel MOSFET designed for power switching applications.
- It is suitable for use in power supplies, inverters, motor control, and other high-voltage circuits.
- The device features low gate charge and fast switching characteristics.
### **Features:**
- **High Voltage Capability:** 600V VDS rating for robust performance.
- **Low On-Resistance:** Minimizes conduction losses.
- **Fast Switching Speed:** Enhances efficiency in high-frequency applications.
- **Avalanche Energy Specified:** Ensures reliability under inductive load conditions.
- **TO-220 Package:** Provides good thermal performance and ease of mounting.
This information is based solely on the manufacturer's datasheet and technical documentation.
