N-CHANNEL 650V **Manufacturer:** STMicroelectronics (ST)
**Part Number:** STP9NK65Z
### **Specifications:**
- **Technology:** N-channel MOSFET
- **Drain-Source Voltage (VDSS):** 650 V
- **Continuous Drain Current (ID):** 9 A
- **Pulsed Drain Current (IDM):** 36 A
- **Power Dissipation (Ptot):** 150 W
- **Gate-Source Voltage (VGS):** ±30 V
- **On-Resistance (RDS(on)):** 0.65 Ω (max) at VGS = 10 V
- **Total Gate Charge (Qg):** 28 nC (typ)
- **Input Capacitance (Ciss):** 1200 pF (typ)
- **Output Capacitance (Coss):** 150 pF (typ)
- **Reverse Transfer Capacitance (Crss):** 35 pF (typ)
- **Turn-On Delay Time (td(on)):** 10 ns (typ)
- **Turn-Off Delay Time (td(off)):** 35 ns (typ)
- **Operating Junction Temperature (TJ):** -55°C to 150°C
- **Package:** TO-220FP (fully insulated)
### **Descriptions:**
The STP9NK65Z is a high-voltage N-channel MOSFET designed for high-efficiency switching applications. It features low on-resistance and fast switching performance, making it suitable for power supplies, motor control, and lighting applications.
### **Features:**
- **High Voltage Capability:** 650 V breakdown voltage
- **Low Gate Charge:** Enhances switching efficiency
- **Low On-Resistance:** Minimizes conduction losses
- **Fully Insulated Package (TO-220FP):** Provides electrical isolation
- **Avalanche Rugged:** Ensures reliability under harsh conditions
- **100% Avalanche Tested:** Guarantees robustness in inductive load switching
This MOSFET is optimized for applications requiring high voltage and efficient power handling.
