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STP9NC60FP from ST,ST,ST Microelectronics

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STP9NC60FP

Manufacturer: ST,ST

N-CHANNEL 600V
Partnumber Manufacturer Quantity Availability
STP9NC60FP ST,ST 10000 In Stock

Description and Introduction

N-CHANNEL 600V The STP9NC60FP is an N-channel Power MOSFET manufactured by STMicroelectronics (ST).  

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 600V  
- **Continuous Drain Current (ID):** 8.5A  
- **Pulsed Drain Current (IDM):** 34A  
- **Power Dissipation (Ptot):** 48W  
- **Gate-Source Voltage (VGS):** ±30V  
- **On-Resistance (RDS(on)):** 0.65Ω (max) @ VGS = 10V  
- **Input Capacitance (Ciss):** 1100pF (typ)  
- **Operating Junction Temperature (TJ):** -55°C to 150°C  
- **Package:** TO-220FP (fully plastic, insulated)  

### **Descriptions & Features:**  
- **High Voltage Capability:** Suitable for 600V applications.  
- **Low Gate Charge:** Ensures fast switching performance.  
- **Avalanche Rugged:** Designed for reliability in harsh conditions.  
- **Fully Insulated Package (TO-220FP):** Provides electrical isolation, eliminating the need for an additional insulator.  
- **Applications:** Switching power supplies, motor control, lighting, and other high-voltage circuits.  

This MOSFET is optimized for high efficiency and robustness in power conversion applications.

Application Scenarios & Design Considerations

N-CHANNEL 600V

Alternative Part Number

  • FQPF9N60 --: 600V 9A N-channel MOSFET in TO-220F full-pack, very close voltage and current ratings to the STP9NC60FP, widely available and commonly used as a drop-in replacement.
  • IRFBC40 --: 600V 6.2A N-channel MOSFET in TO-220, slightly lower current but similar RDS(on) and gate charge, suitable for many switching applications where the STP9NC60FP is used.
  • 2SK3569 --: 600V 10A N-channel MOSFET in TO-220F, comparable voltage and current ratings with isolated full-pack package, a viable alternative for power supply and switching circuits.

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