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STP9NB60FP from ST,ST Microelectronics

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STP9NB60FP

Manufacturer: ST

N-CHANNEL 600V

Partnumber Manufacturer Quantity Availability
STP9NB60FP ST 91 In Stock

Description and Introduction

N-CHANNEL 600V The STP9NB60FP is an N-channel Power MOSFET manufactured by STMicroelectronics. Below are the factual details about the device:

### **Manufacturer:** STMicroelectronics  
### **Part Number:** STP9NB60FP  

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 600V  
- **Continuous Drain Current (ID):** 9A  
- **Pulsed Drain Current (IDM):** 36A  
- **Power Dissipation (PD):** 190W  
- **Gate-Source Voltage (VGS):** ±30V  
- **On-Resistance (RDS(on)):** 0.65Ω (max) at VGS = 10V  
- **Input Capacitance (Ciss):** 1500pF (typ)  
- **Total Gate Charge (Qg):** 35nC (typ)  
- **Threshold Voltage (VGS(th)):** 3V (min), 5V (max)  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** TO-220FP (Fully Insulated)  

### **Descriptions:**  
The STP9NB60FP is a high-voltage N-channel MOSFET designed for high-efficiency switching applications. It features low gate charge and low on-resistance, making it suitable for power supplies, motor control, and lighting applications. The fully insulated TO-220FP package provides electrical isolation between the device and the heatsink.  

### **Features:**  
- **High Voltage Capability (600V)**  
- **Low On-Resistance (RDS(on))**  
- **Fast Switching Speed**  
- **Low Gate Charge (Qg)**  
- **Fully Insulated Package (TO-220FP)**  
- **Avalanche Energy Specified**  
- **100% Avalanche Tested**  

This information is based solely on the manufacturer's datasheet.

Application Scenarios & Design Considerations

N-CHANNEL 600V

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