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STP80NF06 from ST,ST,ST Microelectronics

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STP80NF06

Manufacturer: ST,ST

N-CHANNEL 60V

Partnumber Manufacturer Quantity Availability
STP80NF06 ST,ST 14000 In Stock

Description and Introduction

N-CHANNEL 60V The STP80NF06 is an N-channel Power MOSFET manufactured by STMicroelectronics (ST).  

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 60V  
- **Continuous Drain Current (ID):** 80A  
- **Pulsed Drain Current (IDM):** 320A  
- **Power Dissipation (PD):** 200W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.014Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Total Gate Charge (Qg):** 110nC (typ)  
- **Operating Junction Temperature (TJ):** -55°C to 175°C  
- **Package:** TO-220  

### **Descriptions and Features:**  
- **High current capability** (80A continuous, 320A pulsed)  
- **Low on-resistance** for reduced conduction losses  
- **Fast switching performance**  
- **Avalanche ruggedness** for improved reliability  
- **Fully characterized for linear mode operation**  
- **Standard level gate drive**  
- **Applications:** Switching regulators, motor control, power supplies, and DC-DC converters  

This MOSFET is designed for high-power applications requiring efficient switching and low conduction losses.

Application Scenarios & Design Considerations

N-CHANNEL 60V

Alternative Part Number

  • IRFZ44N --: Widely available N-channel MOSFET with comparable 55V/49A rating, suitable for many low-voltage switching applications.
  • FQP30N06L --: 60V logic-level N-channel MOSFET with similar current capability, good drop-in for low-side switching designs.
  • IRLZ44N --: Logic-level 55V N-channel MOSFET with low RDS(on), usable where gate drive voltage is limited.

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