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STP6NK90Z from ST,ST Microelectronics

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STP6NK90Z

Manufacturer: ST

N-CHANNEL 900V 1.75 OHM 5.8A TO-220/TO-220FP D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET

Partnumber Manufacturer Quantity Availability
STP6NK90Z ST 300 In Stock

Description and Introduction

N-CHANNEL 900V 1.75 OHM 5.8A TO-220/TO-220FP D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET The STP6NK90Z is an N-channel MOSFET manufactured by STMicroelectronics. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Specifications:**
- **Drain-Source Voltage (VDSS):** 900V  
- **Gate-Source Voltage (VGS):** ±30V  
- **Continuous Drain Current (ID):** 4A (at 25°C)  
- **Pulsed Drain Current (IDM):** 16A  
- **Power Dissipation (PD):** 150W (at 25°C)  
- **On-Resistance (RDS(on)):** 1.5Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 3V (min), 5V (max)  
- **Input Capacitance (Ciss):** 500pF (typ)  
- **Output Capacitance (Coss):** 80pF (typ)  
- **Reverse Transfer Capacitance (Crss):** 15pF (typ)  
- **Turn-On Delay Time (td(on)):** 10ns (typ)  
- **Turn-Off Delay Time (td(off)):** 60ns (typ)  
- **Operating Temperature Range:** -55°C to 150°C  
- **Package:** TO-220  

### **Description:**
The STP6NK90Z is a high-voltage N-channel MOSFET designed for applications requiring high efficiency and fast switching. It is optimized for use in power supplies, motor control, and lighting applications.

### **Features:**
- **High Voltage Capability (900V)**  
- **Low Gate Charge**  
- **Low On-Resistance**  
- **Fast Switching Speed**  
- **Avalanche Ruggedness**  
- **Zener-Protected Gate**  

This information is based on the manufacturer's datasheet. For detailed application notes, refer to the official STMicroelectronics documentation.

Application Scenarios & Design Considerations

N-CHANNEL 900V 1.75 OHM 5.8A TO-220/TO-220FP D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET

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