N-CHANNEL 800V The STP6NB80 is an N-channel MOSFET manufactured by STMicroelectronics. Below are the factual details from Ic-phoenix technical data files:
### **Manufacturer:**
STMicroelectronics (ST)
### **Specifications:**
- **Drain-Source Voltage (VDSS):** 800V
- **Continuous Drain Current (ID):** 6A
- **Pulsed Drain Current (IDM):** 24A
- **Power Dissipation (Ptot):** 150W
- **Gate-Source Voltage (VGS):** ±30V
- **On-State Resistance (RDS(on)):** 1.2Ω (typical at VGS = 10V)
- **Input Capacitance (Ciss):** 1100pF (typical)
- **Output Capacitance (Coss):** 200pF (typical)
- **Reverse Transfer Capacitance (Crss):** 40pF (typical)
- **Turn-On Delay Time (td(on)):** 15ns (typical)
- **Turn-Off Delay Time (td(off)):** 65ns (typical)
- **Operating Junction Temperature (TJ):** -55°C to 150°C
### **Descriptions:**
- The STP6NB80 is a high-voltage N-channel MOSFET designed for switching applications.
- It features low gate charge and high ruggedness, making it suitable for power management and industrial applications.
### **Features:**
- **High Voltage Capability:** 800V breakdown voltage.
- **Low Gate Charge:** Ensures fast switching performance.
- **Low On-Resistance:** Enhances efficiency in power conversion.
- **Avalanche Energy Specified:** Provides robustness in harsh conditions.
- **100% Avalanche Tested:** Ensures reliability in high-energy environments.
- **TO-220 Package:** Standard through-hole package for easy mounting.
This information is based on the manufacturer's datasheet and technical documentation.
