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STP55NE06FP

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Partnumber Manufacturer Quantity Availability
STP55NE06FP 70 In Stock

Description and Introduction

N The STP55NE06FP is an N-channel Power MOSFET manufactured by STMicroelectronics.  

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 60V  
- **Continuous Drain Current (ID):** 55A  
- **Pulsed Drain Current (IDM):** 220A  
- **Power Dissipation (PD):** 150W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.018Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V (min) to 4V (max)  
- **Total Gate Charge (Qg):** 100nC (typ)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Package:** TO-220FP (fully plastic)  

### **Descriptions & Features:**  
- Designed for high-efficiency power switching applications.  
- Low on-resistance for reduced conduction losses.  
- Fast switching speed for improved performance.  
- Fully plastic TO-220FP package for enhanced electrical isolation.  
- Suitable for motor control, power supplies, and DC-DC converters.  
- Avalanche ruggedness for improved reliability in harsh conditions.  

This information is based on the manufacturer's datasheet.

Application Scenarios & Design Considerations

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Alternative Part Number

  • IRFZ44NPBF --: N-channel MOSFET in TO-220 package with comparable 55V/49A ratings, widely available and a common drop-in substitute for similar switching applications.
  • FQP50N06 --: 60V N-channel MOSFET rated around 50A in TO-220, close voltage and current match suitable for power switching and motor drive circuits.
  • IRLZ44NPBF --: Logic-level 55V N-channel MOSFET in TO-220 with similar current capability, useful when gate drive voltage is lower than the original design.

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